[labnetwork] ALD cross contamination issue

[Warren Lai]

Colleagues

 

I have a cross contamination question on our Cambridge ALD tool.  A user
requests to do Al2O3 on Bi2Se3 and Nb structures on sapphire (and prefers to
use only acetone and IPA pre-clean).  Does anyone know:

1.       If there is cross-contamination issue for MOS users?

2.       Any procedure to minimize the contamination (Additional pre-clean
or post-clean? Certain deposition to "bury" the contamination etc.)?

Several things to note are:

a.       The exposed areas are sapphire, Bi2Se3 and Nb

b.      The device is made by MBE and ion-milling, so the device (and
exposed area of Bi2Se3 and Nb) is quite small

c.       Because of MBE, the Bi2Se3 is quality grade and "clean"

d.      They prefer pre-clean with only acetone and IPA (based on some
limited experience of acid damage to the device)

 

Your advice will be most appreciated.

 

Best regards,

 

Warren Lai, Ph.D.

Associate Director

Micro Electronics Research Laboratory (MERL)

Electrical and Computer Engineering Department

Rutgers, The State University of New Jersey

Room EE-115

94 Brett Road, Piscataway, NJ 08854

732-445-0680

warren.lai at rutgers.edu

www.merl.rutgers.edu

www.ece.rutgers.edu

 

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