[labnetwork] Oxidation of Si wafers with DRIE passivation polymer

[Aaron Hryciw]

Dear colleagues,

Thank-you all for your responses—they have been immensely helpful.

Cheers,

 – Aaron



Aaron Hryciw, PhD, PEng

Fabrication Group Manager

University of Alberta - nanoFAB

W1-060 ECERF Building

9107 - 116 Street

Edmonton, Alberta

Canada T6G 2V4 Ph: 780-940-7938
www.nanofab.ualberta.ca


On Thu, Aug 4, 2016 at 9:50 PM, prabhakararao yp <prabhakararaoyp at gmail.com>
wrote:

> remove the polymer and do oxidation
>
> Thanks& regards,
> prabhakararao
>
> Dr. Y.P. Prabhakara Rao .M.Tech.Ph.D
> Chief  Operating Officer
> National  Nanofabrication centre
> Centre For Nanoscience and Engineering,
> Indian Institute Of Science,Bangalore-560012
> Mobile: +91 9448365748
> Tel:       +91 80 23600129
> Email:    prabhakararaoyp at cense.iisc.ernet.in
>               prabhakararaoyp at gmail.com
>
> On Thu, Aug 4, 2016 at 7:17 PM, Noah Clay <nclay at seas.upenn.edu> wrote:
>
>> Aaron,
>>
>> We have a rather high power density oxygen barrel asher that removes
>> Bosch polymer.  If you cross-section a test device, there’s an observable
>> difference in SEM sidewall charging pre- and post barrel ashing.  You may
>> also note the change in polymer mushrooming at the tops of features.
>> Definitely, use low keV SEM imaging.
>>
>> It’s been our experience that oxide will not burn off during furnace
>> oxidation; rather, O2 will diffuse through the remaining carbonized layer.
>>
>> Wet process alternative: EKC 265 from DuPont.  http://www.dupont.com/
>> content/dam/dupont/products-and-services/electronic-and-
>> electrical-materials/documents/ekc/EKC265.pdf
>>
>> Best of Luck,
>> Noah
>>
>> *Noah Clay*
>> *Director, Quattrone Nanofabrication Facility*
>> *School of Engineering & Applied Science*
>> *University of Pennsylvania*
>> *Philadelphia, PA*
>>
>> *(215) 898-9308 <%28215%29%20898-9308>*
>> *nclay at upenn.edu <nclay at upenn.edu>*
>> LinkedIn Profile
>> <https://www.linkedin.com/in/noah-clay-5073b3?trk=hp-identity-name>
>>
>> On Aug 3, 2016, at 2:34 PM, Aaron Hryciw <ahryciw at ualberta.ca> wrote:
>>
>> Dear colleagues,
>>
>> Our facility recently installed a Tystar wet/dry oxidation tube, which
>> has so far only been used to oxidise virgin Si wafers.  Recently, one of
>> our users has requested to do a 400–1000 nm wet oxidation at 1100 °C on
>> DRIE (Bosch) etched Si wafers which still have DRIE passivation polymer on
>> them, for the dual purpose of removing the polymer and growing an oxide.
>>
>> Given the tool's excellent performance so far, I am concerned with the
>> possibility of contaminating the (atmospheric) tube as the polymer is
>> burned off, adversely affecting subsequent processes.  My priority is to
>> protect the integrity of the tool, but I also do not want to be needlessly
>> restrictive if the presence of the polymer does not in fact pose any
>> problem.  We are a multi-user facility, with academic and industrial users
>> who primarily do MEMS and microfluidics work (i.e., no CMOS processing).
>>
>> My initial thought would be to have this user remove the polymer first
>> using a dry etch (O₂ plasma), only oxidising the wafers once it has been
>> verified that the polymer is no longer present.
>>
>> Any advice on this matter would be greatly appreciated.  Many thanks.
>>
>> Cheers,
>>
>>   – Aaron Hryciw
>>
>>
>>
>> Aaron Hryciw, PhD, PEng
>> Fabrication Group Manager
>> University of Alberta - nanoFAB
>> W1-060 ECERF Building
>> 9107 - 116 Street
>> Edmonton, Alberta
>> Canada T6G 2V4 Ph: 780-940-7938
>> www.nanofab.ualberta.ca
>>
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>
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