[labnetwork] Ge in a deep Si RIE/ICP

[Kevin Owen]

While I don't think it has come up recently, we do allow Ge in our deep
silicon etcher. It is a "semi-clean" tool (select "non-contaminating"
metals and other materials are allowed). Generally speaking, though, Ge
will etch in fluorine chemistries just as readily as Si, so we don't
believe it will spread any contamination or change the chamber conditioning
significantly. Also I suspect micro-masking would not be a problem, since
it will etch in the same chemistry as the Si, anyway.

-Kevin

On Tue, Feb 23, 2016 at 5:17 PM, Kurt Kupcho <kurt.kupcho at wisc.edu> wrote:

> Hi All
>
>
>
> Here at UW we have a deep silicon etcher like most academic cleanrooms.
> We pretty much restrict the materials allowed in it to Si, SiO2, SiN, and
> photoresist.  We do not allow any metals in the system.  This is because of
> worries about mobile conductive ions and micro-masking problems that can
> occur from using metals in the system.  Recently, we had a student request
> using Ge in the system.  I know other academic cleanrooms have rather
> restrictive materials and rules for their Si DRIE systems as well and
> wanted to get your opinions on allowing Ge in such a system.  Do you?  Is
> there any problems with contamination or micro-masking?  Any other
> additional thoughts beyond those two questions are much appreciated as well.
>
>
>
> Thanks!
>
>
>
> Kurt
>
>
>
>
>
> ---------------------------------------------------
>
> Kurt Kupcho
>
> Process Engineer
>
>
>
> WCAM
>
> 1550 Engineering Drive
>
> ECB Room 3110
>
> Madison, WI  53706
>
>
>
> E:  kurt.kupcho at wisc.edu
>
> T:  608-262-2982
>
>
>
> [image: http://wcam.engr.wisc.edu/logos/pics/wcam420x80.png]
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-- 
Kevin Owen
Senior Engineer in Research
Operations Group, Lurie Nanofabrication Facility
University of Michigan
(734) 545-4014
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