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<div class="moz-cite-prefix">Hi,<br>
<br>
I think that you use this process to dope Si wafers, correct?<br>
Or is it an in-situ doping of some Polysilicon film deposited by
CVD, using Silane?<br>
<br>
In any case you have a concurrent oxidation process with O2 flow
at 1000C;<br>
during which the Boron "segregates" into the SiO2 grown layer
depleting the <br>
Si substrate; so when you remove the oxide for 4 point probe the
resistivity increases.<br>
If it is PolySilicon: the thermal oxidation goes first around the
poly grains and <br>
high resistance again.<br>
<br>
I think of trying to deposit the Boron doped source layer at lower
temperature and<br>
for a short time ( O2 flow still is required for Diborane ) and
continue with drive-in<br>
at 1000C in Nitrogen only. Then remove the Diborane doped source.<br>
<br>
Thanks, Bernard<br>
<br>
On 8/9/12 7:44 AM, Siva Penmetsa wrote:<br>
</div>
<blockquote
cite="mid:CAHmH2YTaKeqT05Jp7HYfG4JJ-K=xjxDGeT8irRE0115dcNqCyg@mail.gmail.com"
type="cite">
<div>Hi All,</div>
<div> </div>
<div>We are trying to optimise Diborane furnace in a new CVD
equipment.</div>
<div> </div>
<div>We have performed few trials(all the souces are gases) at </div>
<div> </div>
<div>Temperature 1000 C </div>
<div>Diborane Flow rate in the range 40 sccm to 100 sccm</div>
<div>Oxygen flow rate 2 SLPM</div>
<div>Nitrogen flow rate is 3 SLPM</div>
<div>Time 30 minutes</div>
<div> </div>
<div>Instead of decrese in resistance we observed that the
resistance incresed to around 500 ohm/sq from around 50 ohm/sq</div>
<div> </div>
<div>We apprecite your experience and inputs on how we can resduce
the resisitivity with better Diborane diffussion.<br clear="all">
<br>
-- <br>
</div>
<div>Thanks & Regards,</div>
<div><strong>Siva Prasad Raju Penmetsa</strong></div>
<div><em>Senior Facility Technologist</em></div>
<div>National Nano Fabrication Center</div>
<div><em>Indian Institute of Science(IISc)</em></div>
<div>Bangalore, India 560 054</div>
<div> </div>
<br>
<br>
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<br>
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