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</o:shapelayout></xml><![endif]--></head><body lang=EN-AU link=blue vlink=purple><div class=WordSection1><p class=MsoNormal><span style='color:#1F497D'>Hi Julia,<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Pure H2 is commonly used in epitaxy reactors at temperature well above 600°C. MOCVD of GaAs/AlGaAs is performed at T=600-800C.<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>In the past I did liquid phase epitaxy of GaAs/AlGaAs around 800C in pure H2.<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Moreover Flammability of H2 in air is between 4 to 80%. So in inert gas like N2 the flammability are different.<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Hope this would help.<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Fouad Karouta<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'><o:p> </o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>*********************************<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Facility Manager ANFF ACT Node<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Research School of Physics and Engineering<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Australian National University<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>ACT 0200, Canberra, Australia<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Tel: + 61 2 6125 7174<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Mob: + 61 451 046 412<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'>Email: fouad.karouta@anu.edu.au<o:p></o:p></span></p><p class=MsoNormal><span style='color:#1F497D'><o:p> </o:p></span></p><div><div style='border:none;border-top:solid #B5C4DF 1.0pt;padding:3.0pt 0cm 0cm 0cm'><p class=MsoNormal><b><span lang=EN-US style='font-size:10.0pt;font-family:"Tahoma","sans-serif"'>From:</span></b><span lang=EN-US style='font-size:10.0pt;font-family:"Tahoma","sans-serif"'> labnetwork-bounces@mtl.mit.edu [mailto:labnetwork-bounces@mtl.mit.edu] <b>On Behalf Of </b>Aebersold,Julia W.<br><b>Sent:</b> Wednesday, 14 November 2012 7:12 AM<br><b>To:</b> Lab Network (labnetwork@mtl.mit.edu)<br><b>Subject:</b> [labnetwork] Anneal temp for aluminum on silicon with forming gas<o:p></o:p></span></p></div></div><p class=MsoNormal><o:p> </o:p></p><p class=MsoNormal><span lang=EN-US>I wanted to gather some information of aluminum anneal on a silicon wafer performed by other cleanrooms. We are using 5% forming gas with an anneal temp of 400C for ½ hour with a 20C/min ramp up and ramp down However, I have also seen higher temps up to 475C, but was concerned about the flammability of 100% hydrogen per its MSDS.<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US><o:p> </o:p></span></p><p class=MsoNormal><span lang=EN-US>Cheers!<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US><o:p> </o:p></span></p><p class=MsoNormal><span lang=EN-US>Julia Aebersold, Ph.D. <o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US>MNTC Cleanroom Manager<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US>Shumaker Research Building, Room 233<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US>2210 South Brook Street<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US>University of Louisville<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US>Louisville, KY 40292<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US><o:p> </o:p></span></p><p class=MsoNormal><span lang=EN-US>502-852-1572<o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US><a href="http://louisville.edu/micronano/">http://louisville.edu/micronano/</a><o:p></o:p></span></p><p class=MsoNormal><span lang=EN-US><o:p> </o:p></span></p></div></body></html>