Dear Sir/Madam<br><br><br clear="all">
<p class="MsoNormal"> I have deposited Amorphous Silicon Carbide using PECVD
(OXFORD INSTRUMENTS PLASMA LAB SYSTEM 100). I did the Stress measurement using DEKTAK;
I found that the SiC layer had both compressive stress and tensile stress.</p><p class="MsoNormal"><br> </p>
<p class="MsoNormal"> Getting both compressive stress and tensile stress on same
SiC layer, is this normal? <br></p><p class="MsoNormal"><br></p>
<p class="MsoNormal" style="margin-bottom:0in;margin-bottom:.0001pt;line-height:normal"> Deposition temperature: 400°C.</p>
<p class="MsoNormal" style="margin-bottom:0in;margin-bottom:.0001pt;line-height:normal"> Pressure: 1400 mT.</p><p class="MsoNormal" style="margin-bottom:0in;margin-bottom:.0001pt;line-height:normal"> <br>
</p><p class="MsoNormal" style="margin-bottom:0in;margin-bottom:.0001pt;line-height:normal"> Requesting for a reply asap.</p><p class="MsoNormal" style="margin-bottom:0in;margin-bottom:.0001pt;line-height:normal">
<br></p>
<br>With Regards, <br><br>Adithi.U<br>Facility Technologist,<br>National Nano Fabrication Centre,<br>CeNSE, Indian Institute of Science<br>Bangalore<br>