<html><head><meta http-equiv="Content-Type" content="text/html charset=us-ascii"></head><body style="word-wrap: break-word; -webkit-nbsp-mode: space; -webkit-line-break: after-white-space;" class="">Hi Vicky. See below for relevant comments from two of my esteemed colleagues, regarding our FlexAL and its sources.<div class=""><br class=""></div><div class="">--Mike<br class=""><div><br class=""><blockquote type="cite" class=""><div class="">Begin forwarded message:</div><br class="Apple-interchange-newline"><div style="margin-top: 0px; margin-right: 0px; margin-bottom: 0px; margin-left: 0px;" class=""><span style="font-family: -webkit-system-font, Helvetica Neue, Helvetica, sans-serif; color:rgba(0, 0, 0, 1.0);" class=""><b class="">From: </b></span><span style="font-family: -webkit-system-font, Helvetica Neue, Helvetica, sans-serif;" class="">Mark Richmond <<a href="mailto:Mark.M.Richmond.7@nd.edu" class="">Mark.M.Richmond.7@nd.edu</a>><br class=""></span></div><div style="margin-top: 0px; margin-right: 0px; margin-bottom: 0px; margin-left: 0px;" class=""><br class=""></div><br class=""><div class=""><div dir="ltr" class="">Mike,<div class=""> I was never informed of any manifold compatibility issues of precursors by Oxford, and Dr. Xing didn't have any objections to that either. I found that odd but the system is under vacuum and is purged well before and after recipes are executed. As you can see from Dave's screen capture we have had this setup for the last few years, although we do not perform many Titanium growths. </div><div class=""><br class=""></div><div class=""> As for the SiO2 and SiN we use BDEAS in our recipes, Nitride growth is very slow though. We never purchased a BTBAS source but we did have a 3DMAS source. The 3DMAS source was used up in attempting to characterize the material and we never had a good material growth so we have not replaced that material. It used to be in the empty spot that is now on the machine.</div><div class=""><br class=""></div><div class=""> Vicky should be able to contact Oxford for their information sheets on different film recipes per precursor or I have in the past anyway. </div><div class=""><br class=""></div><div class="">Thanks</div><div class="">Mark</div></div><div class="gmail_extra"><br class=""><div class="gmail_quote">On Mon, Oct 12, 2015 at 2:09 PM, David Heemstra <span dir="ltr" class=""><<a href="mailto:David.Heemstra.1@nd.edu" target="_blank" class="">David.Heemstra.1@nd.edu</a>></span> wrote:<br class=""><blockquote class="gmail_quote" style="margin:0 0 0 .8ex;border-left:1px #ccc solid;padding-left:1ex"><div dir="ltr" class=""><div class="">Mike:<br class="">We also have two separate manifolds. Below is a screen capture for our system.</div><div class="">Maybe im missing something but - it sounds like they don't want to put TiCl4 and TMA on the same manifold? I believe that is how ours is currently setup.</div><div class="">I thought we had 3DMAS or BTBAS a long time ago - but currently Si source is BDEAS.</div><div class="">Possible (if we are doing something that isn't ideal) it is OK as long as you use sufficient purges afterwards?</div><div class="">Not really sure that this helps. Mark may have a better understanding.</div><div class="">Dave</div><div class=""><br class=""></div><div class=""><br class=""></div><div class="gmail_extra"><br class=""></div><div class="gmail_extra"><br class=""></div><div class="gmail_extra"><img width="506" height="691" alt="Inline image 1" class="" apple-inline="yes" id="5A4744FE-6A1D-492F-8491-C9A69276D518" apple-width="yes" apple-height="yes" src="cid:ii_1505d3a713a9534c"><br class=""></div></div></blockquote></div></div></div></blockquote><div><br class=""></div><br class=""><blockquote type="cite" class=""><div class=""><div class="gmail_extra"><div class="gmail_quote"><blockquote class="gmail_quote" style="margin:0 0 0 .8ex;border-left:1px #ccc solid;padding-left:1ex"><div dir="ltr" class=""><div class="gmail_extra"><div class="gmail_quote">On Sun, Oct 11, 2015 at 10:26 AM, mike young <span dir="ltr" class=""><<a href="mailto:mike.young@nd.edu" target="_blank" class="">mike.young@nd.edu</a>></span> wrote:<br class=""><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;padding-left:1ex;border-left-color:rgb(204,204,204);border-left-width:1px;border-left-style:solid">
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dave/mark, can you advise Vicky regarding this ALD question?<br class="">
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<th align="RIGHT" nowrap="" valign="BASELINE" class="">Subject:
</th>
<td class="">[labnetwork] ALD of SiO2 and SiN with precursors 3DMAS
and BTBAS</td>
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<th align="RIGHT" nowrap="" valign="BASELINE" class="">Date: </th>
<td class="">Fri, 9 Oct 2015 15:56:30 -0400</td>
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<th align="RIGHT" nowrap="" valign="BASELINE" class="">From: </th>
<td class="">Vicky Diadiuk <a href="mailto:diadiuk@mit.edu" target="_blank" class=""><diadiuk@mit.edu></a></td>
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<th align="RIGHT" nowrap="" valign="BASELINE" class="">To: </th>
<td class=""><a href="mailto:labnetwork@mtl.mit.edu" target="_blank" class="">labnetwork@mtl.mit.edu</a></td>
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<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">Hi,</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class=""> We are
interested in adding SiO2 and SiN deposition capabilities to
at least one of our ALD systems (specifically the Oxford
FlexAL).</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">The system
has two sets of independent precursor manifolds. </span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">Currently,
one manifold is completely filled up with TMA, the Hf source
and the W source, while the second manifold only has TiCl4
for depositing TiN and TiO2. </span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">The
problem is that the TiCl4 source (and other such metal
halide sources) is not compatible with metal amide sources
and thus we can't put any metal amide precursors on the two
open slots on the second precursor manifold. </span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class=""><br class="">
</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">Our users
are interested in depositing SiO2 and SiN by using metal
amide precursors like 3DMAS and BTBAS but that requires that
the TiCl4 source be replaced with a compatible Ti precursor,
such as TDMAT to deposit TiN.</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">The
precursors we are considering based on what people seem to
be using at other universities and a quick literature search
are:</span></font></div>
<div class="">
<div class=""><font face="Arial" class=""><span style="font-size:12px" class=""><br class="">
<b class="">SiO2</b></span></font>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">3DMAS/TDMAS <br class="">
BTBAS<br class="">
<br class="">
</span></font></div>
<div class=""><b style="font-size:12px" class=""><font face="Arial" class="">SiN</font></b></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">3DMAS <br class="">
<br class="">
</span></font></div>
<div class="">
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">Does
anyone have any experience w/them & with TDMAT?</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">Any
recommendations or suggestions for precursors for SiO2
and SiN?</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class=""><br class="">
</span></font></div>
</div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">We'd
like to assess all of these precursors and films with
respect to:</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">1)
Cost and availability of precursor</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">2)
Robustness of precursor (A precursor that degrades
rapidly over time wld not be preferred)</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">3)
Quality of film: Electrical data would be nice but even
indices of refraction would do</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">4) Any
chemical compatibility issues.</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">5)
Existence of recipes on the Oxford ALD tool at other
places. This will reduce the amount of optimization
that we will need to do.</span></font></div>
</div>
</div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class=""><br class="">
</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">We really
appreciate any comments you might have.</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class="">Thx,</span></font></div>
<div class=""><font face="Arial" class=""><span style="font-size:12px" class=""> Vicky</span></font></div>
<div class="">
<div class=""><br class="">
</div>
</div>
<br class="">
</div>
<br class="">
</div>
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</div></blockquote></div><br class=""><div apple-content-edited="true" class="">
<div style="color: rgb(0, 0, 0); letter-spacing: normal; orphans: auto; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: auto; word-spacing: 0px; -webkit-text-stroke-width: 0px; word-wrap: break-word; -webkit-nbsp-mode: space; -webkit-line-break: after-white-space;" class="">-- <br class=""><font face="Consolas" class=""><span style="font-size: 11px;" class="">Michael P. Young (574) 631-3268 (office)<br class="">Nanofabrication Specialist (574) 631-4393 (fax)<br class="">Department of Electrical Engineering (765) 637-6302 (cell)<br class="">University of Notre Dame <a href="mailto:mike.young@nd.edu" class="">mike.young@nd.edu</a><br class="">B-38 Stinson-Remick Hall<br class="">Notre Dame, IN 46556-5637</span></font></div>
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