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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">Dear Vicky,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">I have just a few comments in addition to the nice overview that J from Stanford sent.<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">First regarding silicon precursors. We have recipes on file for 3DMAS and BTBAS for both SiNx and SiO2, and for BDEAS we also have recipes for
SiO2 (and I expect this one would also work for SiNx, in many cases precursors are interchangeable to an extent in these recipes). We started in the past with 3DMAS for SiNx, but most of the recent work (in collaboration with Eindhoven University) is on BTBAS
(see also attached papers from me).<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">Second regarding TDMAT and TiCl4. The attached paper from Brennan is also from MIT doing TiN using TDMAT on an OpAL. The mentioned silicon precursors
are compatible with TDMAT. For TDMAT we did quite some work at Yatton and now the results at low temperature are comparable to those for TiCl4 (we can give that recipe as well).
</span><span lang="EN-GB" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">If they want to switch from TiCl4 to TDMAT, we would normally suggest to get a new manifold to replace the chlorine contaminated manifold. From previous experience,
there is a risk that chlorine contamination could decompose other precursors which are installed on that manifold. This is the recommendation, but based on the other responses in this email chain we might be too careful. I can also imagine that something with
high vapour pressure and good stability such as TMA can be on the same manifold when purging is sufficient.</span><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">Best regards,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">Harm<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
<div>
<p class="MsoNormal"><span lang="EN-GB" style="font-size:10.0pt;font-family:"Calibri","sans-serif";color:#1F497D">=============================</span><span lang="EN-GB" style="font-size:10.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-GB" style="font-size:10.0pt;font-family:"Calibri","sans-serif";color:#1F497D">Dr.ir. Harm Knoops (H.C.M. Knoops)<br>
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<a href="http://www.oxford-instruments.com/" target="_blank"><span style="color:#1F497D">www.oxford-instruments.com</span></a><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.0pt;font-family:"Calibri","sans-serif";color:#1F497D">=============================</span><span lang="EN-US" style="font-size:10.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:10.0pt;font-family:"Tahoma","sans-serif"">From:</span></b><span lang="EN-US" style="font-size:10.0pt;font-family:"Tahoma","sans-serif""> WARD Craig
<br>
<b>Sent:</b> dinsdag 13 oktober 2015 13:49<br>
<b>To:</b> KNOOPS Harm; MACKENZIE Brodie<br>
<b>Cc:</b> MCQUARRIE Andrew<br>
<b>Subject:</b> FW: [labnetwork] Fwd: ALD of SiO2 and SiN with precursors 3DMAS and BTBAS<o:p></o:p></span></p>
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</div>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">Chaps,<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D">Some general information from the same chain, J is one of the main users at Stanford.<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#1F497D">Best Regards,</span><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"> <o:p></o:p></span></p>
<p class="MsoNormal"><b><span lang="EN-US" style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#1F497D">Craig Ward</span></b><span lang="EN-US" style="font-size:10.0pt;font-family:"Arial","sans-serif";color:#1F497D"> </span><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri","sans-serif";color:#1F497D"><o:p></o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:10.0pt;font-family:"Tahoma","sans-serif"">From:</span></b><span lang="EN-US" style="font-size:10.0pt;font-family:"Tahoma","sans-serif"">
<a href="mailto:labnetwork-bounces@mtl.mit.edu">labnetwork-bounces@mtl.mit.edu</a> [<a href="mailto:labnetwork-bounces@mtl.mit.edu">mailto:labnetwork-bounces@mtl.mit.edu</a>]
<b>On Behalf Of </b>J Provine<br>
<b>Sent:</b> Tuesday, October 13, 2015 11:48 AM<br>
<b>Cc:</b> Labnetwork<br>
<b>Subject:</b> Re: [labnetwork] Fwd: ALD of SiO2 and SiN with precursors 3DMAS and BTBAS<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Hello Dr. Diadiuk,<o:p></o:p></span></p>
<div>
<p class="MsoNormal"><span lang="EN-US">at stanford we have worked extensively on PEALD of SiN in the last year, characterizing deposition both on the Fiji systems in the SNF and on a FlexAl in a single PI laboratory. we were particularly interested in low
wet etch rate in fluorine chemistries (like HF) and electrical properties such as leakage current and dielectric constant.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">successful deposition was shown to be possible with 3DMAS, BTBAS, DCS (dicholorsilane, which i highly recommend against, reasons below), and TSA (trisilylamine). by far the majority of the work we have done is on 3DMAS,
which we have stocked for a long time and are familiar with since we use it for SiO2 deposition as well. there are a couple of papers coming out soon on this work.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">some details about each that may be helpful for you<o:p></o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US">3DMAS</span></b><span lang="EN-US"> - good recipes established for SiO2 and SiN. most fully characterized precursor from this list. easily obtainable from sigma aldrich and strem and gelleste. price is comparable to
other metal amide precursors (TDMA-Hf and TDMA-Ti). etch rate and electrical properties of SiO2 and SiN films are both demonstrably improved over PECVD at the same temperature. GPC ~0.1A/cycle<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US">BTBAS</span></b><span lang="EN-US"> - new precursor to us for this SiN study. not extensively studied, but deposition definitely possible for SiO2 and SiN. GPC ~0.2A/cycle. readily available and reasonably priced from
all the typical precursor suppliers<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US">TSA</span></b><span lang="EN-US"> - promising for SiN. we have not looked into SiO2 deposition yet. not extensively explored. GPC ~0.25A/cycle for us, but others have reported even higher (close to 1A/cycle) which
we could not reproduce on the FlexAl. low wet etch rate and low leakage currents, similar to what was achieved with 3DMAS. this precursor is pretty hard to stock as we could only source it from air liquid and it look a lot of effort/time/cost to get supply
to Stanford. not sure why that is.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US">DCS</span></b><span lang="EN-US"> - stay away from this. hard to get in a compatible storage cylinder for ALD (much more common to come in large volumes for distribution throughout a facility). dangerous for sure.
also, not at all clear that this precursor provides a self limiting surface reaction, so it does not perform ALD so much as CVD. could not achieve etch rate or electrical properties as good as seen with 3dmas and tsa, most likely because of the lack of self-limiting
half reactions. since you are already using TiCl4, this may not be as much of a concern, but we've stayed away from chloride chemistries in SNF because of issues with co-deposition in the same chamber with Pt and Ru metals by ALD.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">let me comment further on your specific questions:<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">Does anyone have any experience w/them & with TDMAT?</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">we also have used TDMA-Ti for our Ti precursor since we started ALD work in SNF. we have had great success with TiO2 and TiN deposition with this precursor. as
i mentioned above we steered clear of TiCl4 because of HCl by products and compatibility issues since we wanted to deposition Pt and Ru in the same chamber. is it possible this is where the concern you mentioned about TiCl4 with metal amide precursors comes
from? similar to the notes from the folks at notre dame, i don't see a safety issue with using these precursors on the same manifold. as an additional datapoint on this, berkeley's nanolab had TiCl4, TMA, and TDMA-Hf all in use on their picosun system.</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">Any recommendations or suggestions for precursors for SiO2 and SiN?</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">see above.</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">We'd like to assess all of these precursors and films with respect to:</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">1) Cost and availability of precursor</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">addressed above</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">2) Robustness of precursor (A precursor that degrades rapidly over time wld not be preferred)</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">i didn't mention this above, but we never saw any of these decay over time. the only precursor we have stocked for a long time (meaning months to a year) to know
for sure that it has good shelf life is 3DMAS. however, TSA at least is chemically stable and requires no heating for introduction into the chamber, so i would surmise it is also stable. </span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">bonus info: TDMA-Ti is quite stable on the shelf or even heated (we keep it at 75C on the tools), and will last for months.</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">3) Quality of film: Electrical data would be nice but even indices of refraction would do</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">because we have papers coming out soon, i've stopped short of supplying raw data, but gave a general level of results above. indices of refraction for the optimized
recipes are on the order of 2.0 at 655nm for 3DMAS and TSA. closer to 1.9 at 655nm for BTBAS, and 1.8 at 655nm for DCS.</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">4) Any chemical compatibility issues.</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">nothing established in this regard. everything looks fine.</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif";color:red">5) Existence of recipes on the Oxford ALD tool at other places. This will reduce the amount of optimization that we will need to do.</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">on our FlexAl</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">recipes in existence for SiN and SiO2 for 3DMAS. SiN for TSA and BTBAS, and starting points for SiO2.</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.5pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">additionally a starting point recipe for SiO2 for BTBAS on a different reactor (Cambridge Nanotech FijI)</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">please feel free to contact me if you would like recipe details, and i can be in touch regarding our forthcoming papers related to this topic if you wish.</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">i hope this was helpful.</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">dr j</span><span lang="EN-US" style="font-size:9.5pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">On Tue, Oct 13, 2015 at 6:03 AM, Mike Young <<a href="mailto:myoung6@nd.edu" target="_blank">myoung6@nd.edu</a>> wrote:<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Hi Vicky. See below for relevant comments from two of my esteemed colleagues, regarding our FlexAL and its sources.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">--Mike<o:p></o:p></span></p>
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<p class="MsoNormal" style="margin-bottom:12.0pt"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Begin forwarded message:<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
<div>
<p class="MsoNormal"><b><span lang="EN-US" style="font-family:"Helvetica","sans-serif"">From:
</span></b><span lang="EN-US" style="font-family:"Helvetica","sans-serif"">Mark Richmond <<a href="mailto:Mark.M.Richmond.7@nd.edu" target="_blank">Mark.M.Richmond.7@nd.edu</a>></span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Mike,<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"> I was never informed of any manifold compatibility issues of precursors by Oxford, and Dr. Xing didn't have any objections to that either. I found that odd but the system is under vacuum and is purged well before and
after recipes are executed. As you can see from Dave's screen capture we have had this setup for the last few years, although we do not perform many Titanium growths. <o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"> As for the SiO2 and SiN we use BDEAS in our recipes, Nitride growth is very slow though. We never purchased a BTBAS source but we did have a 3DMAS source. The 3DMAS source was used up in attempting to characterize
the material and we never had a good material growth so we have not replaced that material. It used to be in the empty spot that is now on the machine.<o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"> Vicky should be able to contact Oxford for their information sheets on different film recipes per precursor or I have in the past anyway. <o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Thanks<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Mark<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">On Mon, Oct 12, 2015 at 2:09 PM, David Heemstra <<a href="mailto:David.Heemstra.1@nd.edu" target="_blank">David.Heemstra.1@nd.edu</a>> wrote:<o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US">Mike:<br>
We also have two separate manifolds. Below is a screen capture for our system.<o:p></o:p></span></p>
</div>
<div>
<p class="MsoNormal"><span lang="EN-US">Maybe im missing something but - it sounds like they don't want to put TiCl4 and TMA on the same manifold? I believe that is how ours is currently setup.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">I thought we had 3DMAS or BTBAS a long time ago - but currently Si source is BDEAS.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Possible (if we are doing something that isn't ideal) it is OK as long as you use sufficient purges afterwards?<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Not really sure that this helps. Mark may have a better understanding.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">Dave<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><img border="0" width="506" height="691" id="_x0000_i1027" src="cid:image003.png@01D10CAF.4625FD80" alt="Inline image 1"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal" style="margin-bottom:12.0pt"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US">On Sun, Oct 11, 2015 at 10:26 AM, mike young <<a href="mailto:mike.young@nd.edu" target="_blank">mike.young@nd.edu</a>> wrote:<o:p></o:p></span></p>
<div>
<p class="MsoNormal"><span lang="EN-US">dave/mark, can you advise Vicky regarding this ALD question?<o:p></o:p></span></p>
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<p class="MsoNormal" style="margin-bottom:12.0pt"><span lang="EN-US"><o:p> </o:p></span></p>
<div>
<p class="MsoNormal"><span lang="EN-US"><br>
<br>
-------- Forwarded Message -------- <o:p></o:p></span></p>
<table class="MsoNormalTable" border="0" cellspacing="0" cellpadding="0">
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<td nowrap="" style="padding:0cm 0cm 0cm 0cm">
<p class="MsoNormal" align="center" style="text-align:center"><b>Subject: <o:p></o:p></b></p>
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<td style="padding:0cm 0cm 0cm 0cm">
<p class="MsoNormal">[labnetwork] ALD of SiO2 and SiN with precursors 3DMAS and BTBAS<o:p></o:p></p>
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<td nowrap="" style="padding:0cm 0cm 0cm 0cm">
<p class="MsoNormal" align="center" style="text-align:center"><b>Date: <o:p></o:p></b></p>
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<p class="MsoNormal">Fri, 9 Oct 2015 15:56:30 -0400<o:p></o:p></p>
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<p class="MsoNormal" align="center" style="text-align:center"><b>From: <o:p></o:p></b></p>
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<td style="padding:0cm 0cm 0cm 0cm">
<p class="MsoNormal">Vicky Diadiuk <a href="mailto:diadiuk@mit.edu" target="_blank">
<diadiuk@mit.edu></a><o:p></o:p></p>
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<p class="MsoNormal" align="center" style="text-align:center"><b>To: <o:p></o:p></b></p>
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<p class="MsoNormal"><a href="mailto:labnetwork@mtl.mit.edu" target="_blank">labnetwork@mtl.mit.edu</a><o:p></o:p></p>
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<p class="MsoNormal" style="margin-bottom:12.0pt"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">Hi,</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif""> We are interested in adding SiO2 and SiN deposition capabilities to at least one of our ALD systems (specifically the Oxford FlexAL).</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">The system has two sets of independent precursor manifolds. </span><span lang="EN-US"><o:p></o:p></span></p>
</div>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">Currently, one manifold is completely filled up with TMA, the Hf source and the W source, while the second manifold only has TiCl4 for depositing TiN and TiO2.
</span><span lang="EN-US"><o:p></o:p></span></p>
</div>
<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">The problem is that the TiCl4 source (and other such metal halide sources) is not compatible with metal amide sources and thus we can't put any metal amide precursors
on the two open slots on the second precursor manifold. </span><span lang="EN-US"><o:p></o:p></span></p>
</div>
<div>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">Our users are interested in depositing SiO2 and SiN by using metal amide precursors like 3DMAS and BTBAS but that requires that the TiCl4 source be replaced with
a compatible Ti precursor, such as TDMAT to deposit TiN.</span><span lang="EN-US"><o:p></o:p></span></p>
</div>
<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">The precursors we are considering based on what people seem to be using at other universities and a quick literature search are:</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif""><br>
<b>SiO2</b></span><span lang="EN-US"> <o:p></o:p></span></p>
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<p class="MsoNormal" style="margin-bottom:12.0pt"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">3DMAS/TDMAS <br>
BTBAS</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><b><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">SiN</span></b><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal" style="margin-bottom:12.0pt"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">3DMAS </span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">Does anyone have any experience w/them & with TDMAT?</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">Any recommendations or suggestions for precursors for SiO2 and SiN?</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">We'd like to assess all of these precursors and films with respect to:</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">1) Cost and availability of precursor</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">2) Robustness of precursor (A precursor that degrades rapidly over time wld not be preferred)</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">3) Quality of film: Electrical data would be nice but even indices of refraction would do</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">4) Any chemical compatibility issues.</span><span lang="EN-US"><o:p></o:p></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">5) Existence of recipes on the Oxford ALD tool at other places. This will reduce the amount of optimization that we will need to do.</span><span lang="EN-US"><o:p></o:p></span></p>
</div>
</div>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">We really appreciate any comments you might have.</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif"">Thx,</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial","sans-serif""> Vicky</span><span lang="EN-US"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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</blockquote>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span class="hoenzb"><span style="color:#888888"><o:p> </o:p></span></span></p>
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<div>
<p class="MsoNormal"><span lang="EN-US" style="color:black">-- <br>
</span><span lang="EN-US" style="font-size:8.5pt;font-family:Consolas;color:black">Michael P. Young <a href="tel:%28574%29%20631-3268" target="_blank">(574) 631-3268</a> (office)<br>
Nanofabrication Specialist <a href="tel:%28574%29%20631-4393" target="_blank">(574) 631-4393</a> (fax)<br>
Department of Electrical Engineering <a href="tel:%28765%29%20637-6302" target="_blank">(765) 637-6302</a> (cell)<br>
University of Notre Dame <a href="mailto:mike.young@nd.edu" target="_blank">mike.young@nd.edu</a><br>
B-38 Stinson-Remick Hall<br>
Notre Dame, IN 46556-5637</span><span style="color:black"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
</div>
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<p class="MsoNormal" style="margin-bottom:12.0pt"><span lang="EN-US"><br>
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</div>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><br>
<br>
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</div>
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