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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">Mark,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">If the fluorine ICP system is used to etch silicon, I don’t think the NbSe2 can give you a big problem. Because after chemical reaction of NbSe2 with fluorine, all the byproducts
are volatility. The Boiling point of NbF5 is 236C, SeF6 is -46.6C, and SeF4 is 101C. These numbers are all in the pressure of atmosphere. They will be much lower in the pressure of dry etching. If the pumping system uses turbo and dry pump, it cannot hurt
the pump very much. <o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">If the ICP is used to etch SiO2 or Si3N4 films on the top of photoelectric or optical devices (III-V materials), I am afraid the residues of NbF5 can give some side-effects
for the devices (dark current?). To avoid the contamination, a clean recipe can be run after NbSe2 dry etching. The recipe should use O2+CF4 as clean gases.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">Regards,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"><o:p> </o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Yaguang Lian<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Research Engineer<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">2306 Micro and Nanotechnology Laboratory<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">University of Illinois at Urbana-Champaign<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">208 N. Wright St.<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Urbana, IL 61801<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Phone: 217-333-8051<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Email: yglian@illinois.edu</span><span style="font-size:11.0pt;line-height:115%;font-family:"Calibri",sans-serif;color:#1F497D"><o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">From:</span></b><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"> labnetwork-bounces@mtl.mit.edu [mailto:labnetwork-bounces@mtl.mit.edu]
<b>On Behalf Of </b>Mark Morgan<br>
<b>Sent:</b> 2016</span><span lang="ZH-CN" style="font-size:11.0pt;font-family:"Microsoft YaHei",sans-serif">年</span><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">2</span><span lang="ZH-CN" style="font-size:11.0pt;font-family:"Microsoft YaHei",sans-serif">月</span><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">25</span><span lang="ZH-CN" style="font-size:11.0pt;font-family:"Microsoft YaHei",sans-serif">日</span><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">
18:04<br>
<b>To:</b> labnetwork@mtl.mit.edu<br>
<b>Subject:</b> [labnetwork] Etching NbSe2<o:p></o:p></span></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Greetings Friends and Neighbors,<o:p></o:p></p>
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<p class="MsoNormal">i have a user here at the Washington Nanofabrication Facility desirous of etching NbSe2 in our Flourine ICP system. I am seeking info/experience/suggestions regarding this activity and Selenium with respect to hazards and equipment contamination
concerns. There is some info in the literature about RIE of this material via CF4 but i’m not seeing anything regarding hazards to equipment (especially equipment geared to many different users and projects…) and personnel. <o:p></o:p></p>
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<p class="MsoNormal">Probable etch products are SeF6 and NbF5(?)- The SeF6 appears to be a nasty actor but perhaps proper post-process pumping and purging (mmmm… alliteration!) would take care of that…. <o:p></o:p></p>
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<p class="MsoNormal">Thank you so much for the help and guidance.<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Best Regards<o:p></o:p></p>
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<p class="MsoNormal">Mark<o:p></o:p></p>
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<p class="MsoNormal">Mark D. Morgan<br>
Research Engineer, Washington Nanofabrication Facility (WNF)<br>
National Nanotechnology Coordinated Infrastructure (NNCI)<br>
University of Washington<br>
Fluke Hall 132, Box 352143<br>
(206) 221-6349<br>
<a href="mailto:mmorgan3@uw.edu">mmorgan3@uw.edu</a><br>
<a href="https://urldefense.proofpoint.com/v2/url?u=http-3A__www.wnf.washington.edu_&d=BQMFaQ&c=8hUWFZcy2Z-Za5rBPlktOQ&r=e6po9udHSP-lsmrp548phJCJ6oxhBgeSbEZVeUn2v4Q&m=sGhumwk3TlLV6z4Hr0EkJb-4MO8rbEckiHFTdI79qFA&s=SiYrmq_ObYlwuqJsFt8RZz6S3f7YVCX1BKECdp-YHkw&e="><font color="red"><b>The MTL Mail Server has detected a possible fraud attempt from "urldefense.proofpoint.com" claiming to be</b></font> http://www.wnf.washington.edu/</a><o:p></o:p></p>
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