<html xmlns:v="urn:schemas-microsoft-com:vml" xmlns:o="urn:schemas-microsoft-com:office:office" xmlns:w="urn:schemas-microsoft-com:office:word" xmlns:m="http://schemas.microsoft.com/office/2004/12/omml" xmlns="http://www.w3.org/TR/REC-html40">
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<meta http-equiv="Content-Type" content="text/html; charset=utf-8">
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<style><!--
/* Font Definitions */
@font-face
{font-family:SimSun;
panose-1:2 1 6 0 3 1 1 1 1 1;}
@font-face
{font-family:"Cambria Math";
panose-1:2 4 5 3 5 4 6 3 2 4;}
@font-face
{font-family:Calibri;
panose-1:2 15 5 2 2 2 4 3 2 4;}
@font-face
{font-family:"Microsoft YaHei";
panose-1:2 11 5 3 2 2 4 2 2 4;}
@font-face
{font-family:"\@SimSun";
panose-1:2 1 6 0 3 1 1 1 1 1;}
@font-face
{font-family:"\@Microsoft YaHei";
panose-1:2 11 5 3 2 2 4 2 2 4;}
/* Style Definitions */
p.MsoNormal, li.MsoNormal, div.MsoNormal
{margin:0cm;
margin-bottom:.0001pt;
font-size:12.0pt;
font-family:"Times New Roman",serif;}
a:link, span.MsoHyperlink
{mso-style-priority:99;
color:blue;
text-decoration:underline;}
a:visited, span.MsoHyperlinkFollowed
{mso-style-priority:99;
color:purple;
text-decoration:underline;}
p
{mso-style-priority:99;
mso-margin-top-alt:auto;
margin-right:0cm;
mso-margin-bottom-alt:auto;
margin-left:0cm;
font-size:12.0pt;
font-family:"Times New Roman",serif;}
span.EmailStyle18
{mso-style-type:personal-reply;
font-family:"Calibri",sans-serif;
color:#1F497D;}
.MsoChpDefault
{mso-style-type:export-only;
font-family:"Calibri",sans-serif;}
@page WordSection1
{size:612.0pt 792.0pt;
margin:72.0pt 72.0pt 72.0pt 72.0pt;}
div.WordSection1
{page:WordSection1;}
--></style><!--[if gte mso 9]><xml>
<o:shapedefaults v:ext="edit" spidmax="1026" />
</xml><![endif]--><!--[if gte mso 9]><xml>
<o:shapelayout v:ext="edit">
<o:idmap v:ext="edit" data="1" />
</o:shapelayout></xml><![endif]-->
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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">Aaron,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">This is a common process used to remove Teflon film and scallop from silicon after Bosch process. The Teflon film (F-C) is very hard to remove by O2 plasma. It cannot contaminate
the tube. Carbon has chemical reaction with O2 to become CO2, it is gas. Fluorine is also gas. Both of them easily escape from the tube and cannot contaminate it. One more thing, we use HF to clean the tube. So I think it should be fine to use wet oxidation
on Bosch silicon wafer.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">Thanks,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Yaguang Lian<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Research Engineer<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">2306 Micro and Nanotechnology Laboratory<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">University of Illinois at Urbana-Champaign<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">208 N. Wright St.<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Urbana, IL 61801<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Phone: 217-333-8051<o:p></o:p></span></p>
<p class="MsoNormal" style="line-height:115%"><span style="font-size:10.0pt;line-height:115%;font-family:"Arial",sans-serif">Email: yglian@illinois.edu<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">From:</span></b><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"> labnetwork-bounces@mtl.mit.edu [mailto:labnetwork-bounces@mtl.mit.edu]
<b>On Behalf Of </b>Aaron Hryciw<br>
<b>Sent:</b> 2016</span><span lang="ZH-CN" style="font-size:11.0pt;font-family:"Microsoft YaHei",sans-serif">年</span><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">8</span><span lang="ZH-CN" style="font-size:11.0pt;font-family:"Microsoft YaHei",sans-serif">月</span><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">3</span><span lang="ZH-CN" style="font-size:11.0pt;font-family:"Microsoft YaHei",sans-serif">日</span><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">
13:34<br>
<b>To:</b> labnetwork@mtl.mit.edu<br>
<b>Subject:</b> [labnetwork] Oxidation of Si wafers with DRIE passivation polymer<o:p></o:p></span></p>
<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Dear colleagues,<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Our facility recently installed a Tystar wet/dry oxidation tube, which has so far only been used to oxidise virgin Si wafers. Recently, one of our users has requested to do a 400–1000 nm wet oxidation at 1100 °C on DRIE (Bosch) etched
Si wafers which still have DRIE passivation polymer on them, for the dual purpose of removing the polymer and growing an oxide. <o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Given the tool's excellent performance so far, I am concerned with the possibility of contaminating the (atmospheric) tube as the polymer is burned off, adversely affecting subsequent processes. My priority is to protect the integrity
of the tool, but I also do not want to be needlessly restrictive if the presence of the polymer does not in fact pose any problem. We are a multi-user facility, with academic and industrial users who primarily do MEMS and microfluidics work (i.e., no CMOS
processing).<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">My initial thought would be to have this user remove the polymer first using a dry etch (O<span style="font-family:"Cambria Math",serif">₂</span> plasma), only oxidising the wafers once it has been verified that the polymer is no longer
present.<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Any advice on this matter would be greatly appreciated. Many thanks.<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Cheers, <o:p></o:p></p>
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<p class="MsoNormal"> <o:p></o:p></p>
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<p class="MsoNormal"> – Aaron Hryciw<o:p></o:p></p>
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<p class="MsoNormal"><u><span style="font-size:10.0pt"> </span></u><span style="font-size:10.0pt"> </span><o:p></o:p></p>
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<p style="margin:0cm;margin-bottom:.0001pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black">Aaron Hryciw, PhD, PEng</span><span style="font-size:7.5pt"><o:p></o:p></span></p>
<p style="margin:0cm;margin-bottom:.0001pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black">Fabrication Group Manager</span><span style="font-size:7.5pt"><o:p></o:p></span></p>
<p style="margin:0cm;margin-bottom:.0001pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black">University of Alberta - nanoFAB</span><span style="font-size:7.5pt"><o:p></o:p></span></p>
<p style="margin:0cm;margin-bottom:.0001pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black">W1-060 ECERF Building</span><span style="font-size:7.5pt"><o:p></o:p></span></p>
<p style="margin:0cm;margin-bottom:.0001pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black">9107 - 116 Street</span><span style="font-size:7.5pt"><o:p></o:p></span></p>
<p style="margin:0cm;margin-bottom:.0001pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black">Edmonton, Alberta</span><span style="font-size:7.5pt"><o:p></o:p></span></p>
<p style="margin:0cm;margin-bottom:.0001pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black">Canada T6G 2V4 Ph: 780-940-7938</span><span style="font-size:7.5pt"><o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:12.0pt"><span style="font-size:7.5pt;font-family:"Arial",sans-serif;color:black"><a href="https://urldefense.proofpoint.com/v2/url?u=http-3A__www.nanofab.ualberta.ca_&d=CwMFaQ&c=8hUWFZcy2Z-Za5rBPlktOQ&r=e6po9udHSP-lsmrp548phJCJ6oxhBgeSbEZVeUn2v4Q&m=4Pudy5Ng9vOv9xxQMLxhixaa0fLs1myqVnTcC_hqrfU&s=qIbV9dCRTH8cbAanBngGK1nVhsCV7R7DG0hFpd9lJAg&e=" target="_blank"><font color="red"><b>The MTL Mail Server has detected a possible fraud attempt from "urldefense.proofpoint.com" claiming to be</b></font> <span style="color:#1155CC">www.nanofab.ualberta.ca</span></a>
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