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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:#1F497D">Hi,<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:#1F497D">I would look at an increase in the O2 flow first without changing any of the other parameters. The Si etch rate would be dependent on the F radical
intensity in the CF4/O2 plasma. Give it a go and see what happens. <o:p></o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif">From:</span></b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif"> labnetwork-bounces@mtl.mit.edu [mailto:labnetwork-bounces@mtl.mit.edu]
<b>On Behalf Of </b>Jugessur, Aju S<br>
<b>Sent:</b> 07 March 2017 18:15<br>
<b>To:</b> labnetwork@mtl.mit.edu<br>
<b>Subject:</b> [labnetwork] Si RIE etch<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">Hi,<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">I have a user who is using the following Si etch recipe on our Oxford NGP80 etcher:<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">RF power: 100 W<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">Pressure: 100 mT<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">CF4 flow rate: 25 sccm<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">O2 flow rate: 3.1 sccm<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">The etch rate from the above parameters is ~ 0.15 microns/min.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">The selectivity is 1:3.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black"> Can anyone suggest what parameters to tweak to increase the etch rate without causing too much substrate damage or roughness?<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">Thanks for your suggestions.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">Regards<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black">Aju<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.0pt;font-family:"Georgia",serif;color:#103FFB">Aju Jugessur <i>Ph.D.</i><br>
Director, University of Iowa Microfabrication Facility</span><span lang="EN-US" style="font-size:9.0pt;font-family:"Helvetica",sans-serif;color:black"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.0pt;font-family:"Georgia",serif;color:#103FFB">Professor (Adj.), Physics and Astronomy<br>
OSTC, Iowa Advanced Technology Labs<br>
University of Iowa</span><span lang="EN-US" style="font-size:9.0pt;font-family:"Helvetica",sans-serif;color:black"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.0pt;font-family:"Georgia",serif;color:#103FFB">205 N. Madison St</span><span lang="EN-US" style="font-size:9.0pt;font-family:"Helvetica",sans-serif;color:black"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:10.0pt;font-family:"Georgia",serif;color:#103FFB">Iowa City, IA 52242<br>
319 -353-2342 <br>
<a href="mailto:aju-jugessur@uiowa.edu">aju-jugessur@uiowa.edu</a><br>
<a href="http://ostc.uiowa.edu/uimf">http://ostc.uiowa.edu/uimf</a></span><span lang="EN-US" style="font-size:9.0pt;font-family:"Helvetica",sans-serif;color:black"><o:p></o:p></span></p>
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