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<font face="Calibri">Greetings Esta,<br>
<br>
You might consider e-beam evaporation for the Ag and thermal
sublimation for the SiO2 if this is convenient given your machine
architecture. Keep in mind that SiO2 vapor goes everywhere in the
system; much more so than evaporated metals. If you are hesitant
to put SiO2 into this new system in the first place, consider that
it will try to find every nook and crannie in your new chamber so
that you'll want to budget enough time to take the appropriate
precautions prior to deposition. If those precautions are taken
and the system is properly cleaned after the SiO2 work, I would
not expect you to have troubles with future metal deposition in
that system.<br>
<br>
We have experience sputtering both of those materials. They
sputter very well and as is typical, the density of the sputter
deposited layer is generally greater than the evaporated layer, so
that could be factor depending upon the desired properties of the
deposited film. SiO2 via sputtering can be done by RF with an
extremely low deposition rate, or with a doped Silicon or doped
SiO2 target by DC or pulsed DC sputtering. Aluminum is a typical
dopant and just a few percent will make it conductive enough to DC
sputter in this fashion, though you'll have to determine if the
doped SiO2 index is acceptable. The deposition rate of doped
target SiO2 by pulsed DC, while significantly better than RF, is
also rather low unless you have a good reactive sputter control
that keeps the process running high on the hysteresis curve.
Overall, evaporating the materials is simpler and higher rate than
sputtering them, particularly for the SiO2, though the films will
be somewhat denser by sputtering.<br>
<br>
Best of luck to you!<br>
Mike<br>
<br>
</font>
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<p> <span style="font-size:16px;"><span
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<div class="moz-cite-prefix">On 7/31/2017 6:09 PM, Abelev, Esta
wrote:<br>
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<p class="MsoNormal">Dear Colleagues,<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Recently, we got a request to deposit SiO2
and Ag in our e-beam evaporator. We have only one e-beam UHV
evaporator (brand new) which we planned to dedicate for metals
(only). From what was discussed the group is planning to
deposit alternative layers of SiO2 and Ag (10-20nm thick) to
~1micron thick overall thickness. <o:p>
</o:p></p>
<p class="MsoNormal">Did anyone have experience with similar
multilayer structures, would you advise me if e-beam
evaporation or sputtering would better for this project?<o:p></o:p></p>
<p class="MsoNormal">If we will have to go with evaporation of
SiO2, will it have contamination issues with metal deposition?<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Thanks for advice, Esta<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><span
style="font-size:9.0pt;font-family:Atlanta">-----------------------</span><o:p></o:p></p>
<p class="MsoNormal"><b><span
style="font-size:9.0pt;font-family:Atlanta">Esta Abelev,
PhD</span></b><o:p></o:p></p>
<p class="MsoNormal"><span
style="font-size:9.0pt;font-family:Atlanta">Technical
Director,<i> </i>Petersen Institute of NanoScience and
Engineering </span><o:p></o:p></p>
<p class="MsoNormal"><span
style="font-size:9.0pt;font-family:Atlanta">University of
Pittsburgh | 3700 O’Hara Street | 636| Pittsburgh, PA 15261</span><o:p></o:p></p>
<p class="MsoNormal"><span
style="font-size:9.0pt;font-family:Atlanta">412-383-4096 | <a
href="mailto:eabelev@pitt.edu" moz-do-not-send="true"><span
style="color:#0066CC;text-decoration:none">eabelev@pitt.edu</span></a> | <a
href="https://na01.safelinks.protection.outlook.com/?url=http%3A%2F%2Fwww.nano.pitt.edu%2F&data=01%7C01%7Ceabelev%40pitt.edu%7C9f5bd58ba84940765cf308d4024fbe18%7C9ef9f489e0a04eeb87cc3a526112fd0d%7C1&sdata=3KfbG5VbshqdoIAPxvX%2F2s1UeU7ultmBoZmm%2FaZ2Itc%3D&reserved=0"
moz-do-not-send="true"><span
style="color:purple;text-decoration:none">nano.pitt.edu</span></a></span><o:p></o:p></p>
<p class="MsoNormal"><span style="color:black"><o:p> </o:p></span></p>
<p class="MsoNormal"><o:p> </o:p></p>
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