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</o:shapelayout></xml><![endif]--></head><body lang=EN-US link="#0563C1" vlink="#954F72"><div class=WordSection1><p class=MsoNormal>Hello All,<o:p></o:p></p><p class=MsoNormal><o:p> </o:p></p><p class=MsoNormal>We have a user requesting to use our singleton Oxford PlasmaPro ICP-RIE system to etch ZnO via a CF<sub>4</sub>/Ar mix. This request is based on a paper characterizing this etch chemistry (attached). The etch mechanism presented in the paper is the creation of Zn(CF<sub>X</sub>)<sub>y</sub> compounds via CF<sub>3 </sub>radicals and CF<sub>3</sub><sup>+</sup><sub> </sub>present in the plasma that are subsequently removed via Ar+ ion bombardment.<o:p></o:p></p><p class=MsoNormal><o:p> </o:p></p><p class=MsoNormal>Our primary concern is with the possibility of creation of elemental Zn as a byproduct that lingers in the chamber with subsequent long term consequences to the chamber vacuum quality. Is this concern valid? Does anyone have experience with such an etch involving ZnO and is able to provide guidance on best practices? <o:p></o:p></p><p class=MsoNormal><o:p> </o:p></p><p class=MsoNormal>Thanks,<o:p></o:p></p><p class=MsoNormal><o:p> </o:p></p><p class=MsoNormalCxSpMiddle style='margin-bottom:12.0pt;mso-add-space:auto'><span style='color:black'>Sherine George, Ph.D.<br>Research Scientist, Nanofabrication Cleanroom<br>Shared Equipment Authority, Rice University<o:p></o:p></span></p><p class=MsoNormalCxSpMiddle style='margin-bottom:12.0pt;mso-add-space:auto'><span style='color:black'>Abercrombie, C112<br></span><span style='color:blue'>Office: 713-348-4307</span><span style='color:black'> |</span><span style='color:blue'>Cell: 217-819-6740</span><span style='color:black'> |<a href="mailto:sherine.george@rice.edu"><span style='color:blue'>sherine.george@rice.edu</span></a><o:p></o:p></span></p><p class=MsoNormal><o:p> </o:p></p></div></body></html>