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<p class="MsoNormal"><span style="font-size:10.0pt;color:#17365D">Sherine,<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-size:10.0pt;color:#17365D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:10.0pt;color:#17365D">As with sputtering any metal in a vacuum chamber there will be some metal redeposited in the chamber. How much depends on the process itself, mask open area, etch rate and throughput. This
will most likely not cause any harm the ICP tool unless you get sufficient buildup of a metallic coating on the ICP tube itself then this will manifest in plasma stability and striking issues. If this does happen then you can always bead blast the tube to
remove any residual metal. So, as far as the tool goes you are fairly safe. I cannot offer the same reassurance for device performance. As soon as you have introduced metal into an etch chamber there is a risk of contamination through re-sputtering of the
metal deposited onto wafer clamps etc..<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:10.0pt;color:#17365D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:10.0pt;color:#17365D">If you have any further process related questions with Oxford tools please don’t hesitate to let me know.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:10.0pt;color:#17365D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:10.0pt;color:#002060">Best Regards,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:10.0pt;color:#002060"> <o:p></o:p></span></p>
<p class="MsoNormal"><b><span style="font-size:10.0pt;color:#002060">Craig Ward</span></b><span style="font-size:10.0pt;color:#002060"> <o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:10.0pt;color:#1F497D">US Applications Manager</span><span style="font-size:10.0pt;color:#002060"><br>
<br>
<b>Oxford Instruments America, Inc.</b> <br>
300 Baker Avenue, Suite 150,<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:12.0pt"><span style="font-size:10.0pt;color:#002060">Concord, MA 01742, USA
<br>
Mobile: +1 (978) 764 7023 <br>
Email: craig.ward@oxinst.com <br>
<a href="http://www.oxford-instruments.com/" target="_blank"><span style="color:#002060">http://www.oxford-instruments.com/</span></a></span><span style="font-size:10.0pt;color:#17365D">
<o:p></o:p></span></p>
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<p class="MsoNormal"><b><span style="font-size:10.0pt;font-family:"Tahoma","sans-serif"">From:</span></b><span style="font-size:10.0pt;font-family:"Tahoma","sans-serif""> labnetwork-bounces@mtl.mit.edu [mailto:labnetwork-bounces@mtl.mit.edu]
<b>On Behalf Of </b>Sherine George<br>
<b>Sent:</b> Wednesday, November 15, 2017 4:32 PM<br>
<b>To:</b> labnetwork@mtl.mit.edu<br>
<b>Subject:</b> -|EXT|- [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber?<o:p></o:p></span></p>
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<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Hello All,<o:p></o:p></p>
<p class="MsoNormal"> <o:p></o:p></p>
<p class="MsoNormal">We have a user requesting to use our singleton Oxford PlasmaPro ICP-RIE system to etch ZnO via a CF<sub>4</sub>/Ar mix. This request is based on a paper characterizing this etch chemistry (attached). The etch mechanism presented in the
paper is the creation of Zn(CF<sub>X</sub>)<sub>y</sub> compounds via CF<sub>3 </sub>
radicals and CF<sub>3</sub><sup>+</sup><sub> </sub>present in the plasma that are subsequently removed via Ar+ ion bombardment.<o:p></o:p></p>
<p class="MsoNormal"> <o:p></o:p></p>
<p class="MsoNormal">Our primary concern is with the possibility of creation of elemental Zn as a byproduct that lingers in the chamber with subsequent long term consequences to the chamber vacuum quality. Is this concern valid? Does anyone have experience
with such an etch involving ZnO and is able to provide guidance on best practices?
<o:p></o:p></p>
<p class="MsoNormal"> <o:p></o:p></p>
<p class="MsoNormal">Thanks,<o:p></o:p></p>
<p class="MsoNormal"> <o:p></o:p></p>
<p class="MsoNormalCxSpMiddle" style="margin-bottom:12.0pt;mso-add-space:auto"><span style="color:black">Sherine George, Ph.D.<br>
Research Scientist, Nanofabrication Cleanroom<br>
Shared Equipment Authority, Rice University</span><o:p></o:p></p>
<p class="MsoNormalCxSpMiddle" style="margin-bottom:12.0pt;mso-add-space:auto"><span style="color:black">Abercrombie, C112<br>
</span><span style="color:blue">Office: 713-348-4307</span><span style="color:black"> |</span><span style="color:blue">Cell: 217-819-6740</span><span style="color:black"> |<a href="mailto:sherine.george@rice.edu"><span style="color:blue">sherine.george@rice.edu</span></a></span><o:p></o:p></p>
<p class="MsoNormal"> <o:p></o:p></p>
<p class="MsoNormal" style="margin-bottom:12.0pt"><span style="font-size:12.0pt;font-family:"Times New Roman","serif";background:white"><o:p> </o:p></span></p>
<p align="center" style="text-align:center"><span style="background:white">Click <a href="https://www.mailcontrol.com/sr/MZbqvYs5QwJvpeaetUwhCQ==">
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