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Dear Colleagues,<br>
<br>
Thank you to all who have replied to this thread.<br>
<br>
Does anyone have experience with etching LiNbO3 in a chlorine-based
chamber that is used to process III-V materials? We would use
fluorinated gases to etch the LiNbO3 as we have those available as
cleaning gases.<br>
<br>
Other than "dirtying up" the chamber (which could be remedied by
mechanical scrubbing and reconditioning), would the III-V materials
be more tolerable to the LiNbO3 etch byproducts than Si?<br>
<br>
Thank you,<br>
<br>
Iulian<br>
<pre class="moz-signature" cols="72">iulian Codreanu, Ph.D.
Director of Operations, UD NanoFab
163 ISE Lab
221 Academy Street
Newark, DE 19716
302-831-2784
<a class="moz-txt-link-freetext" href="http://udnf.udel.edu">http://udnf.udel.edu</a></pre>
<div class="moz-cite-prefix">On 1/18/2018 11:03 PM, Deng, Jiangdong
wrote:<br>
</div>
<blockquote type="cite"
cite="mid:D686D183.1C739%25jiangdongdeng@fas.harvard.edu">
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charset=windows-1252">
<div>HI, Paul, </div>
<div>We in CNS evaluated different chambers and ICP systems for
LiNbO3 etching, and it turned out Ulvac ICP NLD-570 gave us
better results. Instead of fluorine, we just used Ar (physical
sputtering). Redeposition is always an issue for LiNbO3 etching,
and it is critical to tune the power, pressure and temperature.
This etching process/recipe have been used for LiNbO3 high
speed modulator application for about 2 years (please check
Prof. Marko Loncar group's recent publication). </div>
<div>Our ULVAC NLD-570 RIE is dedicated for oxide material
etching, we haven’t seen too much impact to the SiO2, SiN
etching. We have different chamber for Si device process. the
tool is relative new (2 years old), we just opened the chamber
for deep PM once. </div>
<div>Please feel free to contact us (Kenlin- cced and myself) if
you need more detailed information…</div>
<div><br>
</div>
<div>Best!</div>
<div><br>
</div>
<div><br>
</div>
<div>-JD </div>
<div><br>
</div>
<div><br>
</div>
<div>
<div>-- Jiangdong Deng (JD), Ph.D,</div>
<div><br>
</div>
<div>Associate Director</div>
<div>Senior Principal Scientist,</div>
<div>Center for Nanoscale Systems, </div>
<div>Head of Nanofabrication Facility</div>
<div>Harvard University, </div>
<div>Cambridge, MA 02138</div>
<div>Tel: 617-495-3396</div>
<div><br>
</div>
</div>
<div> </div>
<div><br>
</div>
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<span style="font-weight:bold">From: </span><<a
href="mailto:labnetwork-bounces@mtl.mit.edu"
moz-do-not-send="true">labnetwork-bounces@mtl.mit.edu</a>>
on behalf of "<a href="mailto:patricns@uw.edu"
moz-do-not-send="true">patricns@uw.edu</a>" <<a
href="mailto:patricns@uw.edu" moz-do-not-send="true">patricns@uw.edu</a>><br>
<span style="font-weight:bold">Date: </span>Thursday, January
18, 2018 at 4:57 PM<br>
<span style="font-weight:bold">To: </span>"Horng, Paul S."
<<a href="mailto:horng@udel.edu" moz-do-not-send="true">horng@udel.edu</a>><br>
<span style="font-weight:bold">Cc: </span><a class="moz-txt-link-rfc2396E" href="mailto:labnetwork@mtl.Network">"labnetwork@mtl.
Network"</a> <<a href="mailto:labnetwork@mtl.mit.edu"
moz-do-not-send="true">labnetwork@mtl.mit.edu</a>><br>
<span style="font-weight:bold">Subject: </span>Re:
[labnetwork] ICP etch of LiNbO3<br>
</div>
<div><br>
</div>
<div>
<div style="word-wrap: break-word; -webkit-nbsp-mode: space;
-webkit-line-break: after-white-space;" class="">
Hello Paul,
<div class=""><br class="">
</div>
<div class="">We’ve had some experience now with lithium
niobate materials in an Oxford Plasmalab 100 ICP tool
using fluorine chemistry. The problem we have found is
that the by-products are not truly volatile and tend to
deposit on everything where they are, in subsequent
processes, likely to to be etched and redeposited.</div>
<div class=""><br class="">
</div>
<div class="">This has lead to micro masking, deposition on
other substrates where it is not ideal, and plasma loading
to the point of significant degradation of etch rates and
uniformity. because of this, we were forced to do a hard,
open chamber scrub and clean each time this process was
run, followed by a few etch and clean cycles to get mostly
back to normal operation. The maintenance time is such
that I recommend staying away form this process if at all
possible.</div>
<div class=""><br class="">
</div>
<div class="">We’ve not seen a negative effect on ultimate
vacuum pressure or pump lifetime, but we’ve also reduced
the frequency at which we allow this process due to the
cleaning involved, so it may be we just haven’t had enough
material go through to truly evaluate pump performance and
lifetime expectancy.</div>
<div class=""><br class="">
</div>
<div class="">Best of luck. If you’d like more information
on what we’ve seen, let me know and I’ll put you in
contact with our etch engineer who has been attempting to
cope with the matter.</div>
<div class=""><br class="">
</div>
<div class="">
<div class="">
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<div style="color: rgb(0, 0, 0); letter-spacing:
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<div class="">
<div class="">N. Shane Patrick<br class="">
Research Engineer, Washington
Nanofabrication Facility (WNF) <br class="">
National Nanotechnology Coordinated
Infrastructure (NNCI)<br class="">
University of Washington<br class="">
Fluke Hall 132, Box 352143</div>
<div class="">(206) 221-1045</div>
<div class=""><a href="mailto:patricns@uw.edu"
class="" moz-do-not-send="true">patricns@uw.edu</a></div>
<div class=""><a
href="http://www.wnf.washington.edu/"
class="" moz-do-not-send="true">http://www.wnf.washington.edu/</a></div>
</div>
</div>
</div>
</div>
</div>
</div>
<br class="">
<div>
<blockquote type="cite" class="">
<div class="">On Jan 18, 2018, at 11:28 AM, Horng,
Paul S. <<a href="mailto:horng@udel.edu" class=""
moz-do-not-send="true">horng@udel.edu</a>>
wrote:</div>
<br class="Apple-interchange-newline">
<div class="">
<div class="WordSection1" style="page: WordSection1;
font-family: Helvetica; font-size: 12px;
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0px;">
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
Hi,<o:p class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
Has anyone had experience with plasma etching of
LiNbO3 films ? It is hard to etch so higher
platen power is needed to enhance physical
sputtering. What is the impact on etch rate of
other processes like etching of Si, SiO2, SiN,
etc. in the same chamber ? How often is chamber
liner needed to be scrubbed clean ? Will it
shorten the life of turbo pump ? <o:p
class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
<o:p class=""> </o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
Thank You,<o:p class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
<o:p class=""> </o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
Paul S. Horng, Ph.D<o:p class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
Process Engineer, UD NanoFab<o:p class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
457 ISE Lab<o:p class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
221 Academy Street, Newark, DE 19716<o:p
class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
(302)831-4827<o:p class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
<a href="http://udnf.udel.edu/" style="color:
rgb(149, 79, 114); text-decoration:
underline;" class="" moz-do-not-send="true">http://udnf.udel.edu</a><o:p
class=""></o:p></div>
<div style="margin: 0in 0in 0.0001pt; font-size:
11pt; font-family: Calibri, sans-serif;"
class="">
<o:p class=""> </o:p></div>
</div>
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