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<p class="MsoNormal"><span style="font-size:14.0pt">Dear Colleagues,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt">Here at the Birck Nanotechnology Center we have a Panasonic E620 RIE ICP etcher that uses a variety of gases for etching of various materials. It has capability to do both chlorine-based and fluorine-based
processes. This has given us a lot of versatility for a wide variety of materials. We’re now exploring the implications of using both chemistries in the same etcher, particularly when it comes to making electron devices.
<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt">We had done a small survey of a few other facilities and are finding a mixed response….. some facilities use dedicated etchers to keep these chemistries separated while others have both gases in the same etcher
and use one type of recipe or the other. Particularly for electron devices are there cross-contamination issues/models with using both gases in the same chamber? What would be the failure physics/mechanisms from this? If both chemistries are used in the
same system are there standard protocols between switching etch chemistries that we need to follow?<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt">Any advice would be greatly appreciated as we’re getting into more electron device processing!<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:14.0pt">Thanks,<br>
Ron<o:p></o:p></span></p>
<p class="MsoNormal"><b><span style="font-size:12.0pt;font-family:"Microsoft PhagsPa",sans-serif"><o:p> </o:p></span></b></p>
<p class="MsoNormal"><b><span style="font-size:12.0pt;font-family:"Microsoft PhagsPa",sans-serif"><o:p> </o:p></span></b></p>
<p class="MsoNormal"><b><span style="font-size:14.0pt;font-family:"Microsoft PhagsPa",sans-serif">Ron Reger<o:p></o:p></span></b></p>
<p class="MsoNormal"><i><span style="font-size:10.0pt">Engineering Manager</span></i><i><span style="font-size:10.0pt"><o:p></o:p></span></i></p>
<p class="MsoNormal"><span style="font-size:9.0pt">Birck Nanotechnology Center | Room 2289 |<b><o:p></o:p></b></span></p>
<p class="MsoNormal"><b><span style="font-size:9.0pt">Office:</span></b><span style="font-size:9.0pt">
<span style="color:#0070C0">765.494.6667 </span>| <b>Email:</b> <span style="color:#0070C0">
<a href="mailto:rreger@purdue.edu"><span style="color:#0070C0">rreger@purdue.edu</span></a></span><o:p></o:p></span></p>
<p class="MsoNormal">Wiki: <span style="color:#0070C0"><a href="https://wiki.itap.purdue.edu/display/BNCWiki"><span style="color:#0070C0">https://wiki.itap.purdue.edu/display/BNCWiki</span></a></span><o:p></o:p></p>
<p class="MsoNormal">iLabs: <span style="color:#0070C0"><a href="https://purdue.ilabsolutions.com/homepage/"><span style="color:#0563C1">https://purdue.ilabsolutions.com/homepage/</span></a><o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:9.0pt;font-family:"Corbel",sans-serif">______________________________________________________________<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:5.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><img border="0" width="300" height="66" style="width:3.125in;height:.6875in" id="Picture_x0020_1" src="cid:image001.png@01D47768.370E5FA0" alt="Purdue_University-150_Years_of_Giant_Leaps.png (300×66)"><o:p></o:p></p>
<p class="MsoNormal"><b><span style="font-size:14.0pt"><o:p> </o:p></span></b></p>
<p class="MsoNormal"><b><span style="font-size:12.0pt"><a href="http://www.purdue.edu/giantleaps"><span style="color:#0563C1">www.purdue.edu/giantleaps</span></a><o:p></o:p></span></b></p>
<p class="MsoNormal"><b><span style="font-size:12.0pt"><o:p> </o:p></span></b></p>
<p class="MsoNormal"><o:p> </o:p></p>
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