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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Hi Ron,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Having a fluorine and chlorine in one system is a controversial issue and some people would love it and others would hate.
<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Some manufacturers advise to have SF6 along chlorine for a system to etch mainly III-V semiconductors as SF6 is used for cleaning purposes.
That said I worked in the past with systems sharing both chemistries. At the moment we have two systems one fluorinated and one chlorinated.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Mixing the gases has pros and cons:<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Pros:
<o:p></o:p></span></p>
<p class="MsoListParagraph" style="text-indent:-18.0pt;mso-list:l1 level1 lfo1"><![if !supportLists]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><span style="mso-list:Ignore">1-<span style="font:7.0pt "Times New Roman"">
</span></span></span><![endif]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Economic as 1 system is purchased to etch both III-V and dielectrics/Si. In this case ways to avoid problems is to dedicate
a lap of time for Cl-based and another for F-based chemistry with a cleaning in between.<o:p></o:p></span></p>
<p class="MsoListParagraph" style="text-indent:-18.0pt;mso-list:l1 level1 lfo1"><![if !supportLists]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><span style="mso-list:Ignore">2-<span style="font:7.0pt "Times New Roman"">
</span></span></span><![endif]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Cl2 + SF6 offers the possibility of performing selective etch of GaAs/GaN wrt AlGaAs/AlGaN if required<o:p></o:p></span></p>
<p class="MsoListParagraph" style="text-indent:-18.0pt;mso-list:l1 level1 lfo1"><![if !supportLists]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><span style="mso-list:Ignore">3-<span style="font:7.0pt "Times New Roman"">
</span></span></span><![endif]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Personally in an RIE system I got4x higher etch rate and smooth when etching GaN in SiCl4+SF6 vs SiCl4 (RIE system and not
ICP nor ECR). <o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Cons:<o:p></o:p></span></p>
<p class="MsoListParagraph" style="text-indent:-18.0pt;mso-list:l0 level1 lfo2"><![if !supportLists]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><span style="mso-list:Ignore">1-<span style="font:7.0pt "Times New Roman"">
</span></span></span><![endif]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">May affect reproducibility, however a good policy for switching the chemistries may address this concern.<o:p></o:p></span></p>
<p class="MsoListParagraph" style="text-indent:-18.0pt;mso-list:l0 level1 lfo2"><![if !supportLists]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><span style="mso-list:Ignore">2-<span style="font:7.0pt "Times New Roman"">
</span></span></span><![endif]><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">May not be suitable to achieve best performance in Si etching<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Happy to discuss further, if required, off-line any issue.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Best regards,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Fouad Karouta<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D">*************************************<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><a href="http://anff-act.anu.edu.au/">http://anff-act.anu.edu.au/</a><o:p></o:p></span></p>
<p class="MsoNormal"><a name="_MailEndCompose"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><o:p> </o:p></span></a></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif">From:</span></b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif"> labnetwork-bounces@mtl.mit.edu [mailto:labnetwork-bounces@mtl.mit.edu]
<b>On Behalf Of </b>McWilliams, Scott<br>
<b>Sent:</b> Friday, 9 November 2018 12:17 PM<br>
<b>To:</b> James P McVittie <mcvittie@stanford.edu>; Reger, Ronald K <rreger@purdue.edu>; labnetwork@mtl.mit.edu<br>
<b>Subject:</b> Re: [labnetwork] Mixing Fluorine and Chlorine Chemistries<o:p></o:p></span></p>
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<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D">Ron,
<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:#1F497D">I believe in your case, you are more concerned about switching from one application to another and not so concerned about sequentially using fluorine and chlorine
in the same application, right? In addition to Jim’s comments about removing oxides in Poly Si etching, when I worked at Lam Research, the gate-level polysilicon etch tools used HBr and chlorine chemistries and the chamber cleans in the same chamber always
used fluorine-based gases such as NF3. The protocol for going from one application to another was a fluorine based chamber clean followed by the cycling of application specific dummy wafers. I am unaware of any failure physics/mechanisms of using both chemistries
and it will be interesting to hear others respond to this. <o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:#1F497D">Also, as Jim pointed out, for III/V processing, many fabs use chlorine/methane/hydrogen type processes that form polymers on just about everything in the chamber,
including the mask on the wafer. My own data for low volume III/V processing showed that when I used fluorine based chemistry to open dielectric masks, followed by a chlorine-based ICP etch to etch III/V compounds, we had issues with etch rate and profile
control (I should have talked to Jim before trying this!).<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:#1F497D">Regards, Scott</span><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif">From:</span></b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif">
<a href="mailto:labnetwork-bounces@mtl.mit.edu">labnetwork-bounces@mtl.mit.edu</a> [<a href="mailto:labnetwork-bounces@mtl.mit.edu">mailto:labnetwork-bounces@mtl.mit.edu</a>]
<b>On Behalf Of </b>James P McVittie<br>
<b>Sent:</b> Thursday, November 08, 2018 5:58 PM<br>
<b>To:</b> Reger, Ronald K <<a href="mailto:rreger@purdue.edu">rreger@purdue.edu</a>>;
<a href="mailto:labnetwork@mtl.mit.edu">labnetwork@mtl.mit.edu</a><br>
<b>Subject:</b> Re: [labnetwork] Mixing Fluorine and Chlorine Chemistries<o:p></o:p></span></p>
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</div>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
<div id="divtagdefaultwrapper">
<p><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">Ron, <o:p></o:p></span></p>
<div>
<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">1. F in an etch chamber from previous etch runs can slow down a Cl2 etching process. This is of most concern to III-V users. So for a well-controlled Cl2 etch process
you want to get all the F based polymers out of the chamber. <o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">2. In Poly Si etching C2F6, CF4 or NF3 are often used to remove surface oxides before start the HBr / Cl2 Si etch.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">3. " Small amounts of CF4 (5-10 sccm) are added to the standard BCl3/Cl2/N2 process for residue removal. In some cases (particularly for copper residue), CF4 appears
to widen the process window for residue control.CF4 typically helps to eliminate open field residue, but there have been cases where CF4 helped with dense area residue as well. Since the addition of another gas introduces more variables to the process, the
use ofCF4 should be minimized." From old AMT Metal (Al) Etch Process Manual <o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"> In the Stanford Nanofabrication Facility (SNF) we have F containing gases in all our Cl2 etchers. Our Cl2 Si etchers have CF4 and C2F6. Our ICP metal etcher has CF4,
and Our III-V etcher has SF6. <o:p></o:p></span></p>
</div>
<p><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p> </o:p></span></p>
<div id="Signature">
<div id="divtagdefaultwrapper">
<p style="background:white"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">James (Jim) McVittie, Ph.D.<o:p></o:p></span></p>
<p style="background:white"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">Senior Research Engineer<o:p></o:p></span></p>
<p style="background:white"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">Electrical Engineering<o:p></o:p></span></p>
<p style="background:white"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">Stanford University<o:p></o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:black">From:</span></b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:black">
<a href="mailto:labnetwork-bounces@mtl.mit.edu">labnetwork-bounces@mtl.mit.edu</a> <<a href="mailto:labnetwork-bounces@mtl.mit.edu">labnetwork-bounces@mtl.mit.edu</a>> on behalf of Reger, Ronald K <<a href="mailto:rreger@purdue.edu">rreger@purdue.edu</a>><br>
<b>Sent:</b> Thursday, November 8, 2018 10:45 AM<br>
<b>To:</b> <a href="mailto:labnetwork@mtl.mit.edu">labnetwork@mtl.mit.edu</a><br>
<b>Subject:</b> [labnetwork] Mixing Fluorine and Chlorine Chemistries</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">
<o:p></o:p></span></p>
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<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black">Dear Colleagues,</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black"> </span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black">Here at the Birck Nanotechnology Center we have a Panasonic E620 RIE ICP etcher that uses a variety of gases for etching of various materials. It
has capability to do both chlorine-based and fluorine-based processes. This has given us a lot of versatility for a wide variety of materials. We’re now exploring the implications of using both chemistries in the same etcher, particularly when it comes to
making electron devices. </span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black"> </span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black">We had done a small survey of a few other facilities and are finding a mixed response….. some facilities use dedicated etchers to keep these chemistries
separated while others have both gases in the same etcher and use one type of recipe or the other. Particularly for electron devices are there cross-contamination issues/models with using both gases in the same chamber? What would be the failure physics/mechanisms
from this? If both chemistries are used in the same system are there standard protocols between switching etch chemistries that we need to follow?</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black"> </span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black">Any advice would be greatly appreciated as we’re getting into more electron device processing!</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black"> </span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:14.0pt;font-family:"Calibri",sans-serif;color:black">Thanks,<br>
Ron</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><b><span lang="EN-US" style="font-family:"Microsoft PhagsPa",sans-serif;color:black"> </span></b><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><b><span lang="EN-US" style="font-family:"Microsoft PhagsPa",sans-serif;color:black"> </span></b><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><b><span lang="EN-US" style="font-size:14.0pt;font-family:"Microsoft PhagsPa",sans-serif;color:black">Ron Reger</span></b><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><i><span lang="EN-US" style="font-size:10.0pt;font-family:"Calibri",sans-serif;color:black">Engineering Manager</span></i><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Calibri",sans-serif;color:black">Birck Nanotechnology Center | Room 2289 |</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><b><span lang="EN-US" style="font-size:9.0pt;font-family:"Calibri",sans-serif;color:black">Office:</span></b><span lang="EN-US" style="font-size:9.0pt;font-family:"Calibri",sans-serif;color:black">
</span><span lang="EN-US" style="font-size:9.0pt;font-family:"Calibri",sans-serif;color:#0070C0">765.494.6667
</span><span lang="EN-US" style="font-size:9.0pt;font-family:"Calibri",sans-serif;color:black">|
<b>Email:</b> </span><span lang="EN-US" style="font-size:9.0pt;font-family:"Calibri",sans-serif;color:#0070C0"><a href="mailto:rreger@purdue.edu" id="LPlnk752018"><span style="color:#0070C0">rreger@purdue.edu</span></a></span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">Wiki:
</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:#0070C0"><a href="https://wiki.itap.purdue.edu/display/BNCWiki" id="LPlnk828453"><span style="color:#0070C0">https://wiki.itap.purdue.edu/display/BNCWiki</span></a></span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black">iLabs:
</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:#0070C0"><a href="https://purdue.ilabsolutions.com/homepage/" id="LPlnk689837"><span style="color:#0563C1">https://purdue.ilabsolutions.com/homepage/</span></a></span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><span lang="EN-US" style="font-size:9.0pt;font-family:"Corbel",sans-serif;color:black">______________________________________________________________</span><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
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<p class="xmsonormal"><b><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><a href="http://www.purdue.edu/giantleaps" id="LPlnk561057"><span style="color:#0563C1">www.purdue.edu/giantleaps</span></a></span></b><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
<p class="xmsonormal"><b><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"> </span></b><span lang="EN-US" style="font-family:"Calibri",sans-serif;color:black"><o:p></o:p></span></p>
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