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<span style="background-color: rgba(255, 255, 255, 0);">Hi Aamar,</span>
<div><span style="background-color: rgba(255, 255, 255, 0);"><br>
</span></div>
<div><span style="background-color: rgba(255, 255, 255, 0);">You could also try making a small 1/16” or 1/8” SS tube feed-through that allows a length of tube to enter the chamber and then bent into a position terminating nearby the substrate(s), thus permitting
the small amount of O2 you already/currently use to be discharged directly at the substrate. Inexpensive and worth a shot...</span></div>
<div><span style="background-color: rgba(255, 255, 255, 0);"><br>
</span></div>
<div><span style="background-color: rgba(255, 255, 255, 0);">You would secure the swage fitting on the ATM side only after the correct length of tube within the chamber is determined. If you do not have a small swage feedthrough, you could use a 1/4” feed-through
(or 6mm) and then downsize with an adapter to 1/8 (3mm) nearby the substrate and have a small section of tube affixed there.</span></div>
<div><span style="background-color: rgba(255, 255, 255, 0);"><br>
</span></div>
<div><span style="background-color: rgba(255, 255, 255, 0);">Best regards,</span></div>
<div><span style="background-color: rgba(255, 255, 255, 0);"><br>
</span></div>
<div><span style="background-color: rgba(255, 255, 255, 0);">Mark</span></div>
<div>
<div><span style="background-color: rgba(255, 255, 255, 0);"><br>
</span></div>
<div><br>
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<br>
<div id="AppleMailSignature" dir="ltr"><span style="background-color: rgba(255, 255, 255, 0);"><b>Mark Weiler</b><br>
Equipment & Facilities Manager</span>
<div><span style="background-color: rgba(255, 255, 255, 0);">Claire and John Bertucci Nanotechnology Laboratory<br>
Electrical and Computer Engineering | Carnegie Mellon University<br>
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On Feb 7, 2019, at 22:25, Dr. Aamer Mahmood <<a href="mailto:amahmood@hbku.edu.qa">amahmood@hbku.edu.qa</a>> wrote:<br>
<br>
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<div style="direction: ltr;font-family: Tahoma;color: #000000;font-size: 10pt;">Hello all,
<div>We have been doing reactive oxide depositions with e-beam evaporation of metals and a few sccm oxygen flowing through our system. We do not have a variable position gate valve and can only control the oxygen MFC settings. The corresponding chamber pressure
has been less than 2e-4 Torr. </div>
<div>I have recently received a request to deposit reactive metal oxide films at higher oxygen flow rates that'll correspond to higher chamber pressure during deposition.</div>
<div>I am hesitant to increase the deposition chamber pressure due to the increased flow rate because the manufacturer mentioned the aforementioned chamber pressure as an acceptable upper limit for the e-gun. </div>
<div>I'd appreciate any insights/experiences on this matter particularly 1) how does increased oxygen pressure in the chamber affect the system hardware, 2) any safety concerns etc.</div>
<div>Thanks in advance.</div>
<div><br>
</div>
<div>-Aamer Mahmood</div>
<div>Qatar Environment and Energy Research Institute</div>
<div>Doha, Qatar</div>
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