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<p>TMAH and NaOH will both attack aluminum, but you can use a thin
layer of PMMA under the HSQ, to protect the substrate. Then after
development, use a brief oxygen plasma to clear away the PMMA.
Oxygen will not etch HSQ at all.</p>
<p>There is also some sort of buffered photoresist developer just
for aluminum, but I've never tried that for HSQ.<br>
</p>
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<br>
Michael Rooks
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<br>
Yale Institute for Nanoscience and Quantum Engineering
<br>
nano.yale.edu
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<br>
<br>
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<div class="moz-cite-prefix">On 3/6/2019 7:22 AM, Edmond Chow wrote:<br>
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<blockquote type="cite"
cite="mid:CAAyE23A1sk=U98Qb0XBz6L-bv6=Fjk-2cPXjnrD0NXhPonpM3A@mail.gmail.com">
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<div>Hello, </div>
<div><br>
</div>
<div>We are trying to pattern HSQ with EBL on AlN film
substrate,. We typically use 2.2%TMAH (MF 319)as our HSQ
developer.</div>
<div>However TMAH will attach AlN film and cause problem for our
sample.</div>
<div><br>
</div>
<div>Does anyone has some HSQ developer that is compatible with
AlN?</div>
<div><br>
</div>
<div>Thanks.</div>
<div><br>
</div>
<div>Edmond</div>
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