<div dir="ltr">We are like everyone else: we regularly deposit ITO in a shared system (Lesker Lab-18 loadlock, 5 sources, turbo pumped tool.) The best "as-deposited" film in terms of transmission and resitivity is ~300C with a tiny bit of O2 (2-4%) Our sputter tool heats/cools so slowly that most users just do 2.5% at room temp and either anneal it (if their substrate allows) or live with the results as-deposited. We do DC but when I started up the tool 10 years ago I did RF and it was similar (our old sputter tool we did RF.) <div><br></div><div> Any amount of annealing helps the film - even a hotplate at 180C can lower the resistivity. Ours is a tiny bit O2 rich so 450C + FG RTP was the best for us.<div><br></div><div> -Matt <br clear="all"><div><div dir="ltr" class="gmail_signature" data-smartmail="gmail_signature"><div>Matthew Oonk</div><div>Research Engineer</div><div>Lurie Nanofabrication Facility</div><div>University of Michigan </div><div>734-646-1275</div><div><a href="mailto:mwoonk@umich.edu" target="_blank">mwoonk@umich.edu</a></div></div></div><br></div></div></div><br><div class="gmail_quote"><div dir="ltr" class="gmail_attr">On Thu, Apr 11, 2019 at 7:45 AM Shimon Eliav <<a href="mailto:shimonel@savion.huji.ac.il">shimonel@savion.huji.ac.il</a>> wrote:<br></div><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex">Hi Iulian,<br>
<br>
We have a multi target, multi user Sputtering System. We do ITO deposition with no problem.<br>
>From our experience we recommend you "to go easy" on power (DC or RF) in order not to melt the Indium bonding to the Copper Back Plate or to crack the ITO target itself.<br>
Regards,<br>
<br>
Shimon<br>
The Hebrew University of Jerusalem<br>
The Unit for Nano Fabrication<br>
ISRAEL<br>
<br>
-----Original Message-----<br>
From: <a href="mailto:labnetwork-bounces@mtl.mit.edu" target="_blank">labnetwork-bounces@mtl.mit.edu</a> [mailto:<a href="mailto:labnetwork-bounces@mtl.mit.edu" target="_blank">labnetwork-bounces@mtl.mit.edu</a>] On Behalf Of Iulian Codreanu<br>
Sent: Tuesday, 9 April 2019 19:55<br>
To: Fab Network <<a href="mailto:labnetwork@mtl.mit.edu" target="_blank">labnetwork@mtl.mit.edu</a>><br>
Subject: [labnetwork] ITO deposition<br>
<br>
Dear Colleagues,<br>
<br>
We have received a number of requests to provide ITO deposition capabilities. We have a sputterer but are concerned with the low melting points for Indium and Tin. I am under the impression that ITO needs a dedicated deposition system. What is your experience/advice?<br>
<br>
Thank you,<br>
<br>
Iulian<br>
<br>
--<br>
iulian Codreanu, Ph.D.<br>
Director of Operations, Nanofabrication Facility University of Delaware Harker ISE Lab, Room 163<br>
221 Academy Street<br>
Newark, DE 19716<br>
302-831-2784<br>
<a href="http://udnf.udel.edu" rel="noreferrer" target="_blank">http://udnf.udel.edu</a><br>
<br>
<br>
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