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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D">Fred,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D">I’ve had success getting the uniformity characterized by growing a thin oxide on a bare Si wafer. I ran it flowing oxygen at 1100°C, no chlorine or anything else.
Use a <111> wafer if possible, that’ll grow faster so you’ll get a thicker oxide for less process time.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D">I can’t recall if you can get lamp intensity control on the 610; that said, what I did was design an experiment around the bank intensities and grow oxides until
the oxide uniformity was as good as I was able to set it. Using the Deal-Grove model, I was able to get ± 3°C thermal uniformity at 1100°C.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D">Good luck!!<br>
<br>
Jeff<o:p></o:p></span></p>
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<p class="MsoNormal">Jeff Salzmann<o:p></o:p></p>
<p class="MsoNormal">Design Engineer III, Research and Development<o:p></o:p></p>
<p class="MsoNormal">PCB Piezotronics<o:p></o:p></p>
<p class="MsoNormal">3425 Walden Avenue<o:p></o:p></p>
<p class="MsoNormal">Depew, NY 14043<o:p></o:p></p>
<p class="MsoNormal">O: 716.684.0002 x2907<o:p></o:p></p>
<p class="MsoNormal">C: 716.867.1302<o:p></o:p></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><b><span style="font-size:11.0pt;font-family:"Calibri",sans-serif">From:</span></b><span style="font-size:11.0pt;font-family:"Calibri",sans-serif"> labnetwork-bounces@mtl.mit.edu <labnetwork-bounces@mtl.mit.edu>
<b>On Behalf Of </b>Fred Newman<br>
<b>Sent:</b> Tuesday, February 18, 2020 4:35 PM<br>
<b>To:</b> labnetwork@mtl.mit.edu<br>
<b>Subject:</b> [labnetwork] Thermal uniformity measurement of RTA/RTP tools<o:p></o:p></span></p>
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<p class="MsoNormal"> Hi All,<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Does anyone have any experience with characterizing the thermal uniformity of RTA tools? I am aware of using instrumented TC wafers, dry thermal oxide, Ti silicidation, and Al-Si eutectic to name a few, but am not so clear on all the advantages
and disadvantages, particularly the true sensitivity vs. potential to be misled by results. Any advice, anecdotes, or words of wisdom would be most appreciated.<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">For background, we have a couple of Heatpulse 610 units that we operate at the WNF using quartz holders for 100 - 150 mm wafers. The holders we have make 3 asperity contact points with the wafer, so basically the configuration inside the
tube is nominally nothing absorbing besides the wafer being annealed (usually Si) and the thermocouple wire tip (held by spring force against the wafer back), and little thermal interaction between the chamber fixture and the wafer. Various users employ a
broad range of temperatures, though the ones from whom I get the most questions about uniformity operate in the 500-600C range.<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Many thanks!<o:p></o:p></p>
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<p class="MsoNormal">Fred<o:p></o:p></p>
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<p class="MsoNormal">-- <o:p></o:p></p>
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<p class="MsoNormal"><span style="font-family:"Helvetica",sans-serif;color:black">Fred Newman<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-family:"Helvetica",sans-serif;color:black">Research Engineer<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-family:"Arial",sans-serif;color:#222222">University of Washington, Washington Nanofabrication Facility<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-family:"Arial",sans-serif;color:#222222">4000 Mason Rd, Fluke Hall Room 115<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-family:"Arial",sans-serif;color:#222222">Seattle WA 98195-2143<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-family:"Helvetica",sans-serif;color:black">office 206-616-3534 mobile 505-450-4447<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-family:"Helvetica",sans-serif;color:black"><a href="mailto:fnewman@uw.edu" target="_blank">fnewman@uw.edu</a><o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-family:"Helvetica",sans-serif;color:black"><a href="https://www.wnf.washington.edu/" target="_blank">https://www.wnf.washington.edu/</a></span><o:p></o:p></p>
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