<html><head><meta http-equiv="content-type" content="text/html; charset=utf-8"></head><body dir="auto">Hello,<div><br>Yes, this is always expected from PECVD oxides.</div><div>The Forming Gas 7.5% H2 in N2 Sintering is required for all thermal and deposited</div><div>oxides after metalisation. For Al you can go as high to 550C.</div><div>There are 2 issues regarding these films.</div><div>First you have to do a high temperature anneal ~>800C ( or as high as Your device/ process allows; we did for SiGe a 4 hour anneal at 600C) before the metal processing.</div><div>This is to allow the excess Oxygen and Silicon molecules to react and to force the H2</div><div>and other gases to exdiffuse.</div><div>This will dramatically improve the oxide dielectric breakdown voltage value.</div><div>Second this PECVD process inserts a lot of metal contaminants into the deposited thin film, mostly by sputtering of the industrial grade Al or SS gas shower / unless you use</div><div>an expensive up to date Remote Plasma PECVD machine.</div><div>You can use the MOS capacitor with HF CV plot to accurately measure the mobile</div><div>Ions concentration in the oxide by BTS technique. It is very sensitive. Also you can</div><div>measure the deep level minority carriers killer metals by deep depletion CV lifetime Zerbst test.</div><div>I would like to see those CV plots, please.</div><div>Thanks, Bernard</div><div><a href="mailto:aandreib@gmail.com">aandreib@gmail.com</a></div><div><br></div><div><div id="AppleMailSignature">Sent from my iPad</div><div><br>On Nov 19, 2020, at 10:15 AM, Lino Eugene <<a href="mailto:lino.eugene@uwaterloo.ca">lino.eugene@uwaterloo.ca</a>> wrote:<br><br></div><blockquote type="cite"><div>
<meta http-equiv="Content-Type" content="text/html; charset=iso-8859-1">
<meta name="Generator" content="Microsoft Word 15 (filtered medium)">
<style><!--
/* Font Definitions */
@font-face
{font-family:Wingdings;
panose-1:5 0 0 0 0 0 0 0 0 0;}
@font-face
{font-family:"Cambria Math";
panose-1:2 4 5 3 5 4 6 3 2 4;}
@font-face
{font-family:Calibri;
panose-1:2 15 5 2 2 2 4 3 2 4;}
@font-face
{font-family:"Lucida Calligraphy";
panose-1:3 1 1 1 1 1 1 1 1 1;}
/* Style Definitions */
p.MsoNormal, li.MsoNormal, div.MsoNormal
{margin:0cm;
margin-bottom:.0001pt;
font-size:11.0pt;
font-family:"Calibri",sans-serif;
mso-fareast-language:EN-US;}
a:link, span.MsoHyperlink
{mso-style-priority:99;
color:#0563C1;
text-decoration:underline;}
a:visited, span.MsoHyperlinkFollowed
{mso-style-priority:99;
color:#954F72;
text-decoration:underline;}
p.MsoListParagraph, li.MsoListParagraph, div.MsoListParagraph
{mso-style-priority:34;
margin-top:0cm;
margin-right:0cm;
margin-bottom:0cm;
margin-left:36.0pt;
margin-bottom:.0001pt;
font-size:11.0pt;
font-family:"Calibri",sans-serif;
mso-fareast-language:EN-US;}
span.EmailStyle17
{mso-style-type:personal-compose;
font-family:"Calibri",sans-serif;
color:windowtext;}
.MsoChpDefault
{mso-style-type:export-only;
font-family:"Calibri",sans-serif;
mso-fareast-language:EN-US;}
@page WordSection1
{size:612.0pt 792.0pt;
margin:72.0pt 72.0pt 72.0pt 72.0pt;}
div.WordSection1
{page:WordSection1;}
/* List Definitions */
@list l0
{mso-list-id:1058557352;
mso-list-type:hybrid;
mso-list-template-ids:-676940266 269025281 269025283 269025285 269025281 269025283 269025285 269025281 269025283 269025285;}
@list l0:level1
{mso-level-number-format:bullet;
mso-level-text:\F0B7;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:Symbol;}
@list l0:level2
{mso-level-number-format:bullet;
mso-level-text:o;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:"Courier New";}
@list l0:level3
{mso-level-number-format:bullet;
mso-level-text:\F0A7;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:Wingdings;}
@list l0:level4
{mso-level-number-format:bullet;
mso-level-text:\F0B7;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:Symbol;}
@list l0:level5
{mso-level-number-format:bullet;
mso-level-text:o;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:"Courier New";}
@list l0:level6
{mso-level-number-format:bullet;
mso-level-text:\F0A7;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:Wingdings;}
@list l0:level7
{mso-level-number-format:bullet;
mso-level-text:\F0B7;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:Symbol;}
@list l0:level8
{mso-level-number-format:bullet;
mso-level-text:o;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:"Courier New";}
@list l0:level9
{mso-level-number-format:bullet;
mso-level-text:\F0A7;
mso-level-tab-stop:none;
mso-level-number-position:left;
text-indent:-18.0pt;
font-family:Wingdings;}
ol
{margin-bottom:0cm;}
ul
{margin-bottom:0cm;}
--></style><!--[if gte mso 9]><xml>
<o:shapedefaults v:ext="edit" spidmax="1026" />
</xml><![endif]--><!--[if gte mso 9]><xml>
<o:shapelayout v:ext="edit">
<o:idmap v:ext="edit" data="1" />
</o:shapelayout></xml><![endif]-->
<div class="WordSection1">
<p class="MsoNormal">Dear colleagues,<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">I have done some CV measurements on a MOS capacitor with 22 nm PECVD oxide deposited in a Oxford System100 system for the first time. I noticed that:<o:p></o:p></p>
<p class="MsoListParagraph" style="text-indent:-18.0pt;mso-list:l0 level1 lfo1"><!--[if !supportLists]--><span style="font-family:Symbol"><span style="mso-list:Ignore">·<span style="font:7.0pt "Times New Roman"">
</span></span></span><!--[endif]-->The as-deposited layer has bad CV characteristics with large flatband voltage, hysteresis and shoulder at low frequency, which indicates the presence of interface traps.<o:p></o:p></p>
<p class="MsoListParagraph" style="text-indent:-18.0pt;mso-list:l0 level1 lfo1"><!--[if !supportLists]--><span style="font-family:Symbol"><span style="mso-list:Ignore">·<span style="font:7.0pt "Times New Roman"">
</span></span></span><!--[endif]-->A post-Aluminum metallization annealing in forming gas substantially improves the CV characteristics with a lower capacitance in accumulation, low flat band voltage, inversion at low frequency and no hysteresis.<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">I am wondering if this is expected for PECVD oxide and if forming gas annealing is always required to improve the characteristics. Has one of you have done these measurements for PECVD oxide deposited in similar systems and could share
data for comparison?<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">I can provide the CV curves if required.<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Best,<o:p></o:p></p>
<p class="MsoNormal"><b><span style="font-family:"Lucida Calligraphy";mso-fareast-language:EN-CA"><o:p> </o:p></span></b></p>
<p class="MsoNormal"><b><span style="font-family:"Lucida Calligraphy";mso-fareast-language:EN-CA">Lino Eugene, P.Eng., Ph.D.,<o:p></o:p></span></b></p>
<p class="MsoNormal"><span style="mso-fareast-language:EN-CA">Micro/nanofabrication process engineer<o:p></o:p></span></p>
<p class="MsoNormal"><span style="mso-fareast-language:EN-CA">Quantum-Nano Fabrication and Characterization Facility<o:p></o:p></span></p>
<p class="MsoNormal"><span style="mso-fareast-language:EN-CA">QNC 1611<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA">University of Waterloo<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA">200 University Avenue West<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA">Waterloo, ON, Canada <o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA">N2L 3G1</span><span style="mso-fareast-language:EN-CA"><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA">Ph: +1 519-888-4567 #37788<o:p></o:p></span></p>
<p class="MsoNormal"><span style="mso-fareast-language:EN-CA">Cell: +1 226-929-1685</span><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA"><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:10.5pt;mso-fareast-language:EN-CA">Website:<span style="color:black">
<a href="https://fab.qnc.uwaterloo.ca/">https://fab.qnc.uwaterloo.ca/</a></span></span><span style="mso-fareast-language:EN-CA"><o:p></o:p></span></p>
<p class="MsoNormal"><o:p> </o:p></p>
</div>
</div></blockquote><blockquote type="cite"><div><span>_______________________________________________</span><br><span>labnetwork mailing list</span><br><span><a href="mailto:labnetwork@mtl.mit.edu">labnetwork@mtl.mit.edu</a></span><br><span><a href="https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork">https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork</a></span><br></div></blockquote></div></body></html>