<div dir="ltr">Good morning Martin,<div><br></div><div>I'm the product manager for the Savannah and Fiji ALD products for Veeco (formerly Cambridge NanoTech). </div><div><br></div><div>We've previously used HSi(NMe2)3 or TDMASi in the past for SiO2 depositions. Most of our thermal users have moved away from this Si molecule for a few reasons:</div><div><br></div><div>- it is slow to saturate</div><div>- it requires an extended dose of O3 to fully react and provide a high quality film</div><div><br></div><div>In our ALD systems, we use the stopvalve to isolate the chamber from dynamic vacuum and expose the substrate to a long(ish) dose of HSi(NMe2)3 and O3. Consider 15-30 seconds. I'm not sure that the TFS-200 that you have (please confirm the model number) can do extended exposures of precursors. (You might need to dose a lot of precursor to get saturation - definitely not a good thing for your vacuum pumps).</div><div><br></div><div>Here is an old conference presentation to some prior work we've done with HSi(NMe2)3 and O3:</div><div><a href="https://www.seas.upenn.edu/~nanosop/documents/SiO2fromTDMASandozone_ALD2011.pdf">https://www.seas.upenn.edu/~nanosop/documents/SiO2fromTDMASandozone_ALD2011.pdf</a><br></div><div><br></div><div>There are certainly more recent thermal SiO2 precursors available out there. If there isn't a compelling reason you need to use HSi(NMe2)3 it might be better to pick a different Si source.</div><div><br></div><div>Also a friendly reminder that Veeco provides process recipes and support to our customers (past and present). We also offer depositions in our applications lab if that might be helpful for your end user.</div><div><br></div><div>Feel free to reach out to me at <a href="mailto:edeguns@veeco.com">edeguns@veeco.com</a>.</div><div><br></div><div>Best,<br><br>Eric</div><div><br></div><div><br></div><div><br></div><div><br></div><div><br></div><div><br></div><div><br></div></div><br><div class="gmail_quote"><div dir="ltr" class="gmail_attr">On Wed, Jul 14, 2021 at 11:38 AM Martin,Michael David <<a href="mailto:michael.martin@louisville.edu">michael.martin@louisville.edu</a>> wrote:<br></div><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex">
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Hi guys, <br>
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Would anyone be willing to share process details for using TDMAS (Tris(dimethylamino)silane) on a Beneq ALD system? Beneq tells me they do not have experience with that precursor. Barring a recipe for the particular tool, it would be helpful to just have
a general starting point such as precursor temperature, injection and purge times, substrate temperature, ozone flow rate, etc. There seems to be a frustrating lack of detail in the literature and I have a customer that is chomping at the bit to get SiO2
down. <a href="https://www.sigmaaldrich.com/US/en/substance/trisdimethylaminosilane1613215112897?context=product" id="gmail-m_6432942981901182532LPlnk" target="_blank">
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Regards, <br>
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Michael <br>
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