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<p class="MsoNormal">Hello Joe,<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">There are two papers about Al protection while etching sacrificial oxide layer, experimenting various mixtures of HF, NH4F, and Glycerin by volume. Though they are written in Korean, figures and tables are in English, so you can figure
out where to start. <o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><a href="https://www.koreascience.or.kr/article/JAKO199900842576322.pdf">https://www.koreascience.or.kr/article/JAKO199900842576322.pdf</a><o:p></o:p></p>
<p class="MsoNormal"><a href="https://www.koreascience.or.kr/article/JAKO200000842576127.pdf">https://www.koreascience.or.kr/article/JAKO200000842576127.pdf</a><o:p></o:p></p>
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<p class="MsoNormal">Good luck,<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Seung-Joon Paik, Ph.D.<o:p></o:p></p>
<p class="MsoNormal">Senior Research Engineer <o:p></o:p></p>
<p class="MsoNormal">Instructional Lab Coordinator<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Institute for Electronics and Nanotechnology (IEN)<o:p></o:p></p>
<p class="MsoNormal">Georgia Institute of Technology<o:p></o:p></p>
<p class="MsoNormal">spaik8@gatech.edu<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal"><b>From:</b> labnetwork <labnetwork-bounces@mtl.mit.edu> <b>
On Behalf Of </b>Maduzia, Joseph Walter<br>
<b>Sent:</b> Tuesday, October 26, 2021 4:49 PM<br>
<b>To:</b> labnetwork@mtl.mit.edu<br>
<b>Subject:</b> [labnetwork] Mask of Al in HF<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Hello,<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep’d first.
Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it’s not a good option atm.<o:p></o:p></p>
<p class="MsoNormal"><br>
Thank you for any suggestions you might have!<o:p></o:p></p>
<p class="MsoNormal"><b><span style="color:#13294B;text-transform:uppercase">JOE MADUZIA</span></b><span style="color:black"><br>
</span><i><span style="color:#13294B">MNMS Laboratory Specialist</span></i><span style="color:black"><br>
<br>
</span><span style="color:#13294B">The Grainger College of Engineering</span><span style="color:black"><br>
</span><span style="color:#13294B">Mechanical Science and Engineering</span><span style="color:black"><br>
<br>
</span><span style="color:#13294B">2239 Sidney Lu Mechanical Engineering Bldg</span><span style="color:black"><br>
</span><span style="color:#13294B">1206 W. Green</span><span style="color:black"><br>
</span><span style="color:#13294B">Urbana, IL 61801</span><span style="color:black"><br>
</span><span style="color:#13294B">217.244.6302 | </span><a href="mailto:jmaduzi2@illinois.edu">jmaduzi2@illinois.edu</a><o:p></o:p></p>
<p class="MsoNormal"><a href="https://cleanroom.mechse.illinois.edu/">https://cleanroom.mechse.illinois.edu/</a><span style="color:black"><br>
<br>
</span><a href="http://illinois.edu/"><span style="color:windowtext;text-decoration:none"><img border="0" width="134" height="35" style="width:1.3958in;height:.3645in" id="Picture_x0020_1" src="cid:image001.png@01D7CB11.1E0ED4D0"></span></a><span style="color:black"><br>
<br>
</span><i><span style="color:#666666">Under the Illinois Freedom of Information Act any written communication to or from university employees regarding university business is a public record and may be subject to public disclosure.</span></i><o:p></o:p></p>
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