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Dear Colleagues,</div>
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We have a user who is interested in using our new Jipilec/ECM RTA to anneal a boron spin-on dopant in an effort to make good ohmic contacts to Si(100) ,1-10 ohm-cm initially. After doping one side of the wafer they will deposit Al pads and anneal in forming
gas. Our goal is to get the doping <span style="font-size: 12pt;">level </span>to 1x10^19 cm^-3 or higher. We currently are at ~1×10^18 cm^-3. (4000 rpm spin coat, 60 sec anneal at 1050 C, post HF etch with 10% HF for an hour.).</div>
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Any advice would be most appreciated. 1050 C is the hottest we can go in our RTA.</div>
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Regards,</div>
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Kevin</div>
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