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<p class="MsoNormal"><span style="font-size:11.0pt;mso-fareast-language:EN-US">Hi All,<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;mso-fareast-language:EN-US">We’ve seen ghosting before when using the old Shipley SJR series resist. We replaced those with Megaposit SPR and had the same and have since seen it with Microresist Ma-P. Its happened
on both silicon and fused silica (SiO2), though is only visible on a bare substrate when we get condensation on it (eg acetone evaporating or from breath). We tried measuring the surface using white light interferometers and not found anything so generally
ignored it. This is using pieces for lithography test exposures, not chemical etching them.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;mso-fareast-language:EN-US">I’d be interested to know where they come from though!<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<div>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">Daniel Lloyd<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">Development Engineer,<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">Laser Optical Engineering Ltd.<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">Building 72a<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">The Air Cargo Centre<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">Argosy Road<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">East Midlands Airport<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">DE74 2SA<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D">United Kingdom<o:p></o:p></span></p>
<p class="MsoNormal" style="margin-bottom:2.0pt"><span style="font-size:9.0pt;color:#1F497D"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:9.0pt;color:#1F497D">Tel: +44 (0) 1332 814612<br>
DD: +44(0)1332 815112<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:9.0pt;color:#1F497D">Mob: +44( 0)7719285200<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:9.0pt;color:#1F497D">web:
<a href="http://www.laseroptical.co.uk/">www.laseroptical.co.uk</a><o:p></o:p></span></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><span style="font-size:8.0pt">Company No 3184967<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:8.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal">The Information contained in this E-mail and any subsequent correspondence is private and is intended solely for the intended recipient(s). For those other than the recipient any disclosure, copying, distribution, or any action taken or
omitted to be taken in reliance on such information is prohibited and may be unlawful.<span style="font-size:11.0pt"><o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-size:11.0pt;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt">From:</span></b><span lang="EN-US" style="font-size:11.0pt"> labnetwork <labnetwork-bounces@mtl.mit.edu>
<b>On Behalf Of </b>Hollingshead, Dave<br>
<b>Sent:</b> Friday, March 24, 2023 9:13 PM<br>
<b>To:</b> Gustavo de Oliveira Luiz <deolivei@ualberta.ca>; labnetwork@mtl.mit.edu<br>
<b>Subject:</b> Re: [labnetwork] Strange "sample memory" with LOR 5B<o:p></o:p></span></p>
</div>
</div>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt">Hi Gustavo,<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt">We’ve seen ghosting before, although as you mention it has usually been caused by mild etching of the substrate in the developer. Based on your comments I wouldn’t count out something else in
this case.<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt">This reminds me of some strange behavior we have seen in some of our nLOF processes done on our MLA. We are still trying to investigate what is happening, but we get odd residue or material adhesion
issues on reworked samples. One working theory is that the high power density of the MLA laser exposure is either locally heating the resist to the point of excessive cross-linking or somehow modifying the surface during exposure. Microchem has a white paper
that seems to lend some credence to this theory (<a href="https://www.microchemicals.com/technical_information/exposure_photoresist.pdf">https://www.microchemicals.com/technical_information/exposure_photoresist.pdf</a>, see page 10).<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt">Any chance you have tried (or could try) repeating the process using a contact aligner on the same substrate and see if you still get the same exposure? If it is an MLA-exclusive issue that would
be very interested to know and investigate further.<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt">-Dave<o:p></o:p></span></p>
<p class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;line-height:11.25pt;background:white">
<b><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial",sans-serif;color:#BA0C2F;background:white">Dave Hollingshead</span></b><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial",sans-serif;color:#3F4443"><br>
Manager, Research Operations<br>
<br>
</span><b><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial",sans-serif;color:#BA0C2F">The Ohio State University</span></b><span lang="EN-US" style="font-size:9.0pt;font-family:"Arial",sans-serif;color:#3F4443"><br>
Nanotech West Labs<br>
Suite 100, 1381 Kinnear Rd, Columbus, OH 43212<br>
614.292.1355 Office<br>
<span style="background:white"><a href="mailto:hollingshead.19@osu.edu"><span style="color:#0563C1">hollingshead.19@osu.edu</span></a></span> /
<a href="http://nanotech.osu.edu"><span style="color:#BA0C2F;background:white">nanotech.osu.edu</span></a><br>
<br>
Pronouns: he/him/his<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"><o:p> </o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"><o:p> </o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt">From:</span></b><span lang="EN-US" style="font-size:11.0pt"> labnetwork <<a href="mailto:labnetwork-bounces@mtl.mit.edu">labnetwork-bounces@mtl.mit.edu</a>>
<b>On Behalf Of </b>Howard Northfield<br>
<b>Sent:</b> Friday, March 24, 2023 14:10<br>
<b>To:</b> Gustavo de Oliveira Luiz <<a href="mailto:deolivei@ualberta.ca">deolivei@ualberta.ca</a>>;
<a href="mailto:labnetwork@mtl.mit.edu">labnetwork@mtl.mit.edu</a><br>
<b>Subject:</b> Re: [labnetwork] Strange "sample memory" with LOR 5B<o:p></o:p></span></p>
</div>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
<div>
<p class="MsoNormal" style="mso-line-height-alt:.75pt"><span lang="EN-US" style="font-size:1.0pt;color:white">Yes, previous litho leaves "ghosts", I have seen it often. Howard Northfield Research Associate Advanced Research Complex (ARC) University of Ottawa
From: labnetwork <labnetwork-bounces@ mtl. mit. edu> on behalf of Gustavo de Oliveira
<o:p></o:p></span></p>
</div>
<div>
<p class="MsoNormal" style="mso-line-height-alt:.75pt"><span lang="EN-US" style="font-size:1.0pt;color:white"><o:p> </o:p></span></p>
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<p class="MsoNormal" style="background:white"><span lang="EN-US" style="font-size:12.0pt;color:black"><o:p> </o:p></span></p>
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<p class="MsoNormal" style="background:white"><span lang="EN-US" style="font-size:12.0pt;color:black">Yes, previous litho leaves "ghosts", I have seen it often. <o:p></o:p></span></p>
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<p class="MsoNormal" style="background:white"><span lang="EN-US" style="font-size:12.0pt;color:black"><o:p> </o:p></span></p>
</div>
<div>
<p class="MsoNormal" style="background:white"><span lang="EN-US" style="font-size:12.0pt;color:black">Howard Northfield
<o:p></o:p></span></p>
<div>
<p class="MsoNormal" style="background:white"><span lang="EN-US" style="font-size:12.0pt;color:black">Research Associate<o:p></o:p></span></p>
</div>
<div>
<p class="MsoNormal" style="background:white"><span lang="EN-US" style="font-size:12.0pt;color:black">Advanced Research Complex (ARC)<o:p></o:p></span></p>
</div>
<p class="MsoNormal" style="background:white"><span lang="EN-US" style="font-size:12.0pt;color:black">University of Ottawa<o:p></o:p></span></p>
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<hr size="2" width="98%" align="center">
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt;color:black">From:</span></b><span lang="EN-US" style="font-size:11.0pt;color:black"> labnetwork <<a href="mailto:labnetwork-bounces@mtl.mit.edu">labnetwork-bounces@mtl.mit.edu</a>> on behalf
of Gustavo de Oliveira Luiz <<a href="mailto:deolivei@ualberta.ca">deolivei@ualberta.ca</a>><br>
<b>Sent:</b> Friday, March 24, 2023 1:37 PM<br>
<b>To:</b> <a href="mailto:labnetwork@mtl.mit.edu">labnetwork@mtl.mit.edu</a> <<a href="mailto:labnetwork@mtl.mit.edu">labnetwork@mtl.mit.edu</a>><br>
<b>Subject:</b> [labnetwork] Strange "sample memory" with LOR 5B</span><span lang="EN-US" style="font-size:11.0pt">
<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt"> <o:p></o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:9.0pt;color:#FF4233">Attention : courriel externe | external email</span></b><span lang="EN-US" style="font-size:9.0pt;color:#FF4233"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Hello everyone,<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">While working on a recipe for LOR 5B/AZ 1512 in our automatic development system, I encountered some intriguing effects when reusing wafers for my tests. This could
be a problem for our users when developing their own process, so we'd appreciate it if anyone could help us to understand what is going on.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Below is a picture of a sample right before exposure, taken using our MLA150. The dark/bright features you see are NOT etched on the wafer (these wafers were never
etched). The marks are from a previous lithography test. They become apparent after coating the sample with LOR 5B and even more after adding AZ 1512. And I don't see them when coating only with AZ 1512 (I reused wafers for that process development without
any issues).<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif"><img border="0" width="542" height="387" style="width:5.6458in;height:4.0312in" id="Picture_x0020_2" src="cid:image001.png@01D9608D.77CE6310"></span><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif"><o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">And what is more intriguing is that these features affect exposure/development of my test mask. For instance, on a virgin sample I can expose and auto-develop with
the same recipe (dose and development time) I use for the manual process. On a reused sample, the reisst stack behaves as if it were underexposed (a dose test made this very obvious).<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Here are the steps during my tests:<o:p></o:p></span></p>
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<ol start="1" type="1">
<li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level1 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Piranha clean<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level1 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">HMDS prime on a YES oven<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level1 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Spin-coat with LOR 5B/AZ 1512 (marks show up on a reused sample)<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level1 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Expose using either a mask aligner or DWL<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level1 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Auto-develop in our Laurell EDC-650 (resist seems underexposed over the marks)
<o:p></o:p></span></li></ol>
<ol start="5" type="1">
<ol start="1" type="1">
<li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level2 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">AZ Developer 1:1 – 90 s<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level2 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Rinse (DI water) and dry (N2+spin) – 60-120 s<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level2 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">MF-319 – 5 s<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level2 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Rinse (DI water) and dry (N2+spin) – 60-120 s<o:p></o:p></span></li></ol>
</ol>
<ol start="6" type="1">
<li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level1 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Strip resist with Remover PG<o:p></o:p></span></li><li class="MsoNormal" style="mso-margin-top-alt:auto;mso-margin-bottom-alt:auto;mso-list:l0 level1 lfo3">
<span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Repeat all steps for every iteration<o:p></o:p></span></li></ol>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">At first I thought that this could actually be some etching of my Si wafers by MF-319, even though unlikely given the low TMAH concentration (and I'm not sure why
that would affect exposure/development). But the sample in the image above has 2 μm thermal oxide, so practically impervious to TMAH. Not to mention that the brightest crossing marks come from testing a recipe where TMAH was not used at all. This must be some
strange interaction between LOR 5B and the sample surface, which I'd expect to be practically reset after piranha and HMDS priming.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif"><o:p> </o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">My search for more information regarding LOR 5B and it's sensitivity to surface conditions has proven fruitless so far. And requiring a brand new sample for every
iteration can get expensive quite quickly. We'd appreciate it if you could point us to some references where this was discussed in any form, or if you know of a method to avoid this from happening.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">I'm sorry for the long email, and thank you in advance for any comments.<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">Best regards,<o:p></o:p></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11.0pt;font-family:"Arial",sans-serif">--<br>
Gustavo de Oliveira Luiz, PhD<br>
Applications/Research Specialist<br>
nanoFAB, University of Alberta<br>
+1 (780) 619-1463<o:p></o:p></span></p>
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