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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Hi,<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">We have deposited A-Si by PECVD with Argon, is OK for 1um but any thicker we started having stress delamination.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US"><o:p> </o:p></span></p>
<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Best regards<o:p></o:p></span></p>
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<p class="MsoNormal"><span style="font-size:11.0pt;font-family:"Calibri",sans-serif;color:#1F497D;mso-fareast-language:EN-US">Peter<o:p></o:p></span></p>
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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif">From:</span></b><span lang="EN-US" style="font-size:11.0pt;font-family:"Calibri",sans-serif"> labnetwork <labnetwork-bounces@mtl.mit.edu>
<b>On Behalf Of </b>Carlos Gramajo<br>
<b>Sent:</b> 26 May 2023 17:04<br>
<b>To:</b> Zhu Yunxuan <yxzhuphys245@gmail.com><br>
<b>Cc:</b> labnetwork@mtl.mit.edu<br>
<b>Subject:</b> Re: [labnetwork] Question regarding amorphous Si deposition<o:p></o:p></span></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Hi Zhu, <o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">I have done 1 µm films of amorphous Si in an e-beam evaporation chamber. I had some issues with delamination when I was growing it. What I had to do was to slow down the rate of deposition. Unfortunately that means you have longer deposition
times, therefore more exposure to radiative heat from the source. In that chamber we did not have a thermocouple on the sample holder and we didn't know what was the max temperature reached.<o:p></o:p></p>
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<p class="MsoNormal">It may be worth trying if you have a way to measure T and see if you can keep that in check by growing it in stages with cooling times in between.<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">I hope this helps,<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Cheers,<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Carlos<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">On Fri, May 26, 2023 at 6:57 AM Zhu Yunxuan <<a href="mailto:yxzhuphys245@gmail.com">yxzhuphys245@gmail.com</a>> wrote:<o:p></o:p></p>
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<p class="MsoNormal">Hi everyone, <o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Is there a way to deposit thick amorphous Si on several micrometres scale(~5um or above) but with a low processing temperature (<150 deg C)? PECVD is one possibility but the typical operating substrate temperature is too high (>200 deg
C) which will destroy our device.<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">Best regards,<o:p></o:p></p>
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<p class="MsoNormal">Longji Cui<o:p></o:p></p>
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<p class="MsoNormal"><o:p> </o:p></p>
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<p class="MsoNormal">University of Colorado Boulder<o:p></o:p></p>
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<p class="MsoNormal">_______________________________________________<br>
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<p class="MsoNormal"><span class="gmailsignatureprefix">-- </span><o:p></o:p></p>
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<p class="MsoNormal">Carlos Gramajo <o:p></o:p></p>
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<p class="MsoNormal">Cleanroom Research Scientist<o:p></o:p></p>
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<p class="MsoNormal">Shared Equipment Authority (SEA), Rice University<o:p></o:p></p>
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<p class="MsoNormal">Cell: 713-743-8115; Office: 713-348-8243; <a href="mailto:cg70@rice.edu" target="_blank">
cg70@rice.edu</a><o:p></o:p></p>
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