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<p class="MsoNormal">We have a need to etch a thin layer of silicon off of 200mm wafers. The silicon layer is freshly ground and unpatterned. Etch needs to have sufficient oxide selectivity to stop within a buried oxide layer which is 0.2-1.0um thick. Entire
silicon layer needs to be removed (ex. no edge exclusion due to clamping ring).<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Requested etch is similar to removing a 10um device silicon layer off an SOI wafer and stopping in BOX layer…<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Open to wet or dry etch methods. If wet, single-sided processing is preferred to prevent etching back of wafer, but a tank etch is acceptable if a viable option exists.
<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Can anyone point me towards a service or lab facility that could perform this etch in low volumes (10-12 wafers/month)?<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal">Thanks for your input.<o:p></o:p></p>
<p class="MsoNormal"><o:p> </o:p></p>
<p class="MsoNormal"><span style="mso-ligatures:none">Randy Parker<o:p></o:p></span></p>
<p class="MsoNormal"><span style="mso-ligatures:none">Sr. Process Engineer<o:p></o:p></span></p>
<p class="MsoNormal"><span style="mso-ligatures:none">American Semiconductor, Inc.<o:p></o:p></span></p>
<p class="MsoNormal"><span style="mso-ligatures:none">208-336-2773, ext 23<o:p></o:p></span></p>
<p class="MsoNormal"><span style="mso-ligatures:none"><o:p> </o:p></span></p>
<p class="MsoNormal"><i><span style="color:red;mso-ligatures:none">All content and attachments are ASI confidential and proprietary.<o:p></o:p></span></i></p>
<p class="MsoNormal"><o:p> </o:p></p>
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