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Lab Network,</div>
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I have a Sputtered PZT film on a seed layer/ bottom electrode of ~200nm Sputtered Pt (on thermal SiO2/ SOI- substrate). Any idea if I can use the Pt surface as an etch stop while using Ar (physical etch) in RIE? </div>
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In previous such devices involving this process, I have had difficulty wire bonding this Pt surface. Is it possible the Pt has eroded too much for wire bonding?</div>
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Does anyone have the etch selectivity data between sputtered PZT vs. Pt for Ar-RIE?</div>
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I have a PR mask of AZ4562 (~6um thickness).</div>
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Thank you!</div>
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<span style="font-family: Calibri, Helvetica, sans-serif; font-size: 12pt;">--</span></div>
<div class="elementToProof"><span data-ogsc="rgb(0, 0, 0)" style="font-size: 12pt; font-family: Calibri, Arial, Helvetica, sans-serif; margin: 0px; color: rgb(0, 0, 0); background-color: rgb(255, 255, 255);"><span data-ogsc="" style="font-size:9pt;margin:0px">Goutam
P (Process Integration Engineer</span><span data-ogsc="rgb(0, 0, 0)" style="font-size:9pt;margin:0px">),</span></span></div>
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<span data-ogsc="" style="font-size:9pt;margin:0px">National Nano-fabrication Centre (NNfC),</span></div>
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<span data-ogsc="" style="font-size:9pt;margin:0px">Centre for Nano Science and Engineering (CeNSE),</span></div>
<span data-ogsc="rgb(0, 0, 0)" style="font-size: 12pt; font-family: Calibri, Arial, Helvetica, sans-serif; margin: 0px; color: rgb(0, 0, 0); background-color: rgb(255, 255, 255);"><span data-ogsc="" style="font-size:9pt;margin:0px">Indian Institute of Science
(IISc.), Bengaluru-560012</span></span>
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