<html><head><meta http-equiv="content-type" content="text/html; charset=utf-8"></head><body dir="auto">Hello,<div>Safety first:</div><div>You can purchase tanks with up 5.5%H2 in Nitrogen electronic grade mixture; and use it with some simple recipe interlocks ( 5 minute N2 flush before & after Forming Gas run), and check the gas exhaust scrubber.</div><div>Please note that while this is an homogeneous mixture under high pressure, inside the tank, its concentration ratio could be different outside: accumulation of more than 6% Hydrogen in air is a hazard. Low probability but theoretically possible.</div><div>5%Hydrogen Forming Gas is historical standard for MOS capacitor final annealing.</div><div>For higher H2 concentrations, strict additional hardware interlocks are required.<br><br>The final Annealing aka Sintering process has 3 main functions:</div><div>1. Interface states density reduction by H2 saturation</div><div>2. Metal adherence to the substrate </div><div>3. Annealing of the crystalline damage by the plasma assisted previous processes.</div><div>H2 diffuses very fast in Si above 400C.</div><div>The second one limits the Temeprature/Time process budget, depending of the metal-substrate combination. Historically the Al - Si combination is limited to 550C, and it’s</div><div>alloy process is called Sinter. Time dependent to avoid Al spiking. </div><div>The process runs usually at 400-425C for 10 minutes, which might be too long for a RTA machine. Anyway any Sinter is better than none.</div><div>Thanks, Andrei<br><div dir="ltr">Sent from my iPad</div><div dir="ltr"><br><blockquote type="cite">On Feb 27, 2024, at 3:56 PM, Beaudoin, Mario <beaudoin@physics.ubc.ca> wrote:<br><br></blockquote></div><blockquote type="cite"><div dir="ltr">
<meta http-equiv="content-type" content="text/html; charset=UTF-8">
<p>Dear Network,</p>
<p>We're setting up a new RTA and will run it with Ar, N2 and
forming gas. We're uncertain about the % level of hydrogen we
want in our forming gas. Can someone recomment the best hydrogen
% to use for MOS capacitor annealing?</p>
<p>Regards,</p>
<p>Mario<br>
</p>
<div class="moz-signature">-- <br>
<img alt="Mario Beaudoin SBQMI sig 3.jpg" src="cid:part1.yRUUe2v4.50C7PtyS@physics.ubc.ca"></div>
<span>_______________________________________________</span><br><span>labnetwork mailing list</span><br><span>labnetwork@mtl.mit.edu</span><br><span>https://mtl.mit.edu/mailman/listinfo.cgi/labnetwork</span><br></div></blockquote></div></body></html>