<div dir="ltr"><div class="gmail_default" style="color:#0b5394">Hi Guoliang,</div><div class="gmail_default" style="color:#0b5394"><br></div><div class="gmail_default" style="color:#0b5394">It looks like you may be seeing spitting of Al from the crucible. I have not personally seen this before with electron beam evaporation of Al, but I have seen the same result with sputtering. In the case of sputtering, you can get micro-arcing on the surface of an Al target. The high energy arcs will generate molten Al that spits from the target and deposits on the surface of the wafer. In those cases, we saw the same behavior with thickness. Thinner films looked pristine, while thicker films that underwent continuous deposition showed the same black dots. Our analysis also showed that such dots were pure Al. The black dots were present regardless of sputter power and seemed mainly dependent on the overall time during which the plasma is present at the target. Once we broke the deposition into cycles, the issue went away, and we achieved pristine films up to and beyond 1um thick (each cycle was 200nm or less of deposition followed by a wait time and target cool down with the plasma off).</div><div class="gmail_default" style="color:#0b5394"><br></div><div class="gmail_default" style="color:#0b5394">In the case of electron beam evaporation, there are several factors that can cause similar spitting of molten material, such as</div><div class="gmail_default" style="color:#0b5394"><ul><li>Non-uniform heating: If the sweep of the electron beam is too small and you are only heating a localized spot within the crucible, it can overheat that region, leading to spitting. The fix is to increase the area over which the beam sweeps.</li></ul><ul><li>Material purity: If there are impurities in the metal, especially carbon impurities, it can increase the tendency to spit. At one point in time, we evaporated Au from a graphite crucible and had this issue. After switching to tungsten crucibles, the problem went away.</li></ul><ul><li>Outgassing: If the target material is heated too quickly, it can lead to outgassing and spitting. Given that you are only seeing this as you increase thickness, outgassing is likely not the issue, but I figured it may be worth mentioning. </li></ul><div>In addition, you mentioned that your throw distance is 1m. While that is a relatively long throw, molten particles can travel such distances. We have a similar distance in one of our evaporators, and we did see the effect with other materials in the past.</div><div><br></div></div><div class="gmail_default" style="color:#0b5394">Best Regards,</div><div class="gmail_default" style="color:#0b5394"><br>Matt</div><div class="gmail_default" style="color:#0b5394"><br></div></div><br><div class="gmail_quote gmail_quote_container"><div dir="ltr" class="gmail_attr">On Wed, Aug 20, 2025 at 3:50 PM Wang Guoliang <<a href="mailto:guoliang.wang@silicon-austria.com">guoliang.wang@silicon-austria.com</a>> wrote:<br></div><blockquote class="gmail_quote" style="margin:0px 0px 0px 0.8ex;border-left:1px solid rgb(204,204,204);padding-left:1ex"><div class="msg4530331582902696247">
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<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Dear All from the Labnetwork community,<u></u><u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Recently, our lab received a request to deposit a 750 nm aluminum film on a 200 mm Si substrate using e-beam evaporation. The deposition was carried out with an
aluminum slug in a 40 cc water-cooled pocket. The process proceeded smoothly with stable rate, power, and pressure.<u></u><u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">However, upon initial microscopic inspection, the deposited aluminum film exhibited numerous black dots distributed across the entire wafer. We attempted several
approaches to eliminate these defects, but so far have been unsuccessful.<u></u><u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">I am wondering if anyone has encountered similar issues when depositing thick aluminum films. Any insights or suggestions on how to address this problem would be
greatly appreciated.<u></u><u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Details of the evaporation:<u></u><u></u></span></p>
<ul style="margin-top:0cm" type="disc">
<li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Deposition rate: 1 A/s<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Deposition power: ~20%
<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Deposition pressure: ~5E-7 mbar<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Substrate cooling: No (Wafer were placed on a planar wafer holder)<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Throw distance: 1 m
<u></u><u></u></span></li></ul>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Approaches we have already tried:<u></u><u></u></span></p>
<ul style="margin-top:0cm" type="disc">
<li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">AFM/SEM characterization</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">
– The black dots varied in size, with the largest reaching ~200 nm in diameter. Their morphology was pyramid-like, featuring a central peak surrounded by some trenches.<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">EDX analysis</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"> – The
black dots were identified as aluminum.<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">FIB analysis
</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">– There was no cavity inside the black dots.<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Adhesion layer</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"> –
Adding a 75 nm Ti adhesion layer yielded no improvement.<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Different deposition rate at 5 A/s and 0.5 A/s</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">
– Both yielded no improvement. <u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Thickness variation</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">
– Depositions at 200 nm, 400 nm, and 600 nm were tested. Defects only appeared in the 600 nm Al layer. All wafers exhibited similar film stress.<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Pre-melted aluminum pellets</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">
– Using a carbon crucible liner, reduced deposition power, and the same rate resulted in an increased number of black dots.<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Multiple-stage deposition
</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">– Depositing 400 nm with a liner, pausing for 30 minutes, and then depositing an additional 350 nm yielded no improvement.<u></u><u></u></span></li><li class="m_4530331582902696247MsoListParagraph" style="margin-left:0cm"><b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Alternative substrates</span></b><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">
– Depositions on Si substrates with thermal oxide and on fused silica showed no improvement.<u></u><u></u></span></li></ul>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Attached are the microscope image, AFM image, and SEM image for your reference.<u></u><u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Thanks and best regards,<u></u><u></u></span></p>
<p class="MsoNormal"><span lang="EN-US" style="font-size:11pt;font-family:Arial,sans-serif">Guoliang<u></u><u></u></span></p>
<p class="MsoNormal"><span style="font-size:11pt;font-family:Arial,sans-serif"><u></u> <u></u></span></p>
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<p class="MsoNormal"><span style="font-size:9pt;color:rgb(0,0,1)">Guoliang</span><span style="font-size:1pt;font-family:"Times New Roman",serif;color:white"></span><span><u></u><u></u></span></p>
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<p class="MsoNormal"><span style="font-size:9pt;color:rgb(0,0,1)">SAL MicroFab</span><span><u></u><u></u></span></p>
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<p class="MsoNormal"><span lang="EN-US" style="font-size:9pt;color:rgb(0,0,1)">High Tech Campus Villach - Europastraße 12</span><span lang="EN-US"><u></u><u></u></span></p>
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<p class="MsoNormal"><span style="font-size:9pt;color:rgb(0,154,155)"><a href="mailto:guoliang.wang@silicon-austria.com" target="_blank"><span style="color:rgb(0,154,155)">guoliang.wang@silicon-austria.com</span></a></span><span><u></u><u></u></span></p>
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</div></blockquote></div><div><br clear="all"></div><div><br></div><span class="gmail_signature_prefix">-- </span><br><div dir="ltr" class="gmail_signature"><div dir="ltr"><p class="MsoNormal">--<br>
Matthew T. Moneck, Ph.D<br>
Executive Director, Claire & John Bertucci Nanotechnology Laboratory<br>
Electrical & Computer Engineering | Carnegie Mellon University<br>
5000 Forbes Avenue, Pittsburgh, PA 15213-3890<br>
Phone: 412-268-5430<br>
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