[labnetwork] Can we use the same chamber for both Si and III-V (GaAs, InP, GaN) etching

[weidong zhou]

Dear Colleagues

I have one question: Can we use the same chamber for both Si and III-V (GaAs, InP, GaN, etc)? Any potential contamination issues?
Why in most places, there are two separate chambers/tools for Si and III-V etching?

Thanks.

Weidong
 		 	   		  
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