[labnetwork] Can we use the same chamber for both Si and III-V (GaAs, InP, GaN) etching

[Hathaway, Malcolm]

Generally not, as any residual  As,  P, or Ga will act as a dopant in your Si devices.

Similarly, Si is a dopant for many of these other materials.

As you noticed, most places keep them separate.  Some places will not even allow both materials in the same lab.


Mac
Harvard CNS


________________________________________
From: labnetwork-bounces at mtl.mit.edu [labnetwork-bounces at mtl.mit.edu] On Behalf Of weidong zhou [weidong001 at hotmail.com]
Sent: Tuesday, August 16, 2011 11:24 PM
To: Lab Network
Subject: [labnetwork] Can we use the same chamber for both Si and III-V (GaAs, InP, GaN) etching

Dear Colleagues

I have one question: Can we use the same chamber for both Si and III-V (GaAs, InP, GaN, etc)? Any potential contamination issues?
Why in most places, there are two separate chambers/tools for Si and III-V etching?

Thanks.

Weidong