[labnetwork] Silicon Nitride question

[Chris Balicki]

Hello Everyone,

Here at Simon Fraser University, we are also optimizing our SiN LPCVD setup. Certainly, we appreciate the recent responses and recommendations.

The dry pump (Edward iQDP80 in our case) requires significant N2 purge flow. Currently, we supply this N2 via a membrane generator. Since the generator capacity has been taxed, current O2 levels are between 1.5-2.0%. Our pump exhaust is fed to an Edwards TPU via a ~15ft run of unheated SS tubing.

1. Are O2 levels of 1.5-2.0% harmful to dry pump operation? If so, what N2 purity is recommended?
2. What further measures are recommended to minimize pump exhaust buildup due to O2 content and unreacted silanes/byproducts?

Thanks,

Chris

---
Christopher Balicki
Clean Room Technician, EIT
4D LABS, Simon Fraser University
8888 University Drive
Burnaby, BC V5A 1S6
t: 778-782-8026 e: balicki at 4dlabs.ca w: www.4dlabs.ca

----- Original Message -----
From: "Richard H. Morrison, Jr." <rmorrison at draper.com>
To: labnetwork at mtl.mit.edu
Sent: Wednesday, April 11, 2012 5:08:56 AM
Subject: [labnetwork] Silicon Nitride question





Hi Everyone, 



I am restarting a Silicon Nitride LPCVD process and I have a few questions. The process will use a EBARA dry pump therefore should I use a trap on the vacuum pump inlet to catch any particulate generated? 



Any issue with excess hydrogen from the process going into the dry pump, do I need a burn box on the vacuum pump exhaust? 



2 nd question has anybody tried to run the LPCVD process on a wafer with a platinum metal pattern on the surface? I was wondering if there maybe some adverse effect because of the catalytic nature of Platinum. 



Thanks 

Rick 





Rick Morrison 

Senior Member Technical Staff 

Group Leader Microfabrication Operations 

Draper Laboratory 

555 Technology Square 

Cambridge, MA 02139 



W 617-258-3420 

C 508-930-3461 


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