[labnetwork] Anneal temp for aluminum on silicon with forming gas

[Henk van Zeijl - EWI]

Dear Julia Aebersold

This is an Al/Si(1%) alloy recipe in use at Delft university, the Netherlands

PROCESS

TEMPERATURE
(in °C)

GASSES & FLOWS
(in liter/min)

TIME
(in minutes)

boat in

400

nitrogen:             3.0

5

stabilize 1

400

nitrogen:             3.0

5

stabilize2

400

nitrogen:             3.0

10

alloying

400

nitrogen:             3.0
hydrogen:           0.3

20

purge

400

nitrogen:             3.0

5

boat out

400

nitrogen:             3.0

5

We use Al(Si1%) to avoid junction spiking on shallow n+ p junctions. This recipe also improves the low current characteristics of bipolar npn transistors, see below (copy of lecture slides).

[cid:image001.png at 01CDC272.0D7368E0][cid:image002.png at 01CDC272.0D7368E0]
Kind regars, Henk van Zeijl


Delft University of Technology / DIMES
POBox 5053
NL-2600 GB DELFT
The Netherlands
phone: ++31 15 2781092
Mobile: ++31 6 24373305
fax: ++31 15 2787369
Email: h.w.vanzeijl at tudelft.nl

From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Aebersold,Julia W.
Sent: 13 November 2012 21:12
To: Lab Network (labnetwork at mtl.mit.edu)
Subject: [labnetwork] Anneal temp for aluminum on silicon with forming gas

I wanted to gather some information of aluminum anneal on a silicon wafer performed by other cleanrooms.   We are using 5% forming gas with an anneal temp of  400C for ½ hour with a 20C/min ramp up and ramp down  However, I have also seen higher temps up to 475C, but was concerned about the flammability of 100% hydrogen per its MSDS.

Cheers!

Julia Aebersold, Ph.D.
MNTC Cleanroom Manager
Shumaker Research Building, Room 233
2210 South Brook Street
University of Louisville
Louisville, KY  40292

502-852-1572
http://louisville.edu/micronano/

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