[labnetwork] E-Beam Evaporation, Ni optimization.

[Mario Portillo]

We have 4 cents now...I agree with Charles........

Mario A. Portillo Sr.
High'born Technology USA Inc.
Semiconductor Equipment Services
8130 Glades Road, #229
Boca Raton, FL 33434
561 479-1975 office
561 504-0244 cell
hbtusainc at yahoo.com
www.hbtusainc.com
 

________________________________
 From: Charles Ellis <elliscd at auburn.edu>
To: "labnetwork at mtl.mit.edu" <labnetwork at mtl.mit.edu> 
Sent: Wednesday, July 31, 2013 5:01 PM
Subject: Re: [labnetwork] E-Beam Evaporation, Ni optimization.
  


I could be wrong as the original intent  of this forum, but I welcome the process questions..  I think it is a great place for the old guys like me and some of you to share our experiences and maybe help some of these young guys.  As a lab manager I also welcome the operations discussions – it does not seem that this forum is overly busy and so I vote we encourage process questions as well as operational questions.  It seems to have been working quite well so far. I very much enjoy the traffic I have seen over the years.. 
 
Just my 2 cents! 
 
Charles Ellis… 
Auburn.. 
 From: Bill Flounders <bill at eecs.berkeley.edu>
Date: Wednesday, July 31, 2013 2:00 PM
To: Chandrashekar S Kambar <kambar009 at gmail.com>, "labnetwork at mtl.mit.edu" <labnetwork at mtl.mit.edu>
Subject: Re: [labnetwork] E-Beam Evaporation, Ni optimization.
 
 
Chandrashekar S Kambar,
Lab Network is primarily for operations discussions
or facility wide issues rather than detailed nanofabrication questions.
Please consider the mems talk venue for
questions at this level of process detail.
I also encourage you to contact Process Support
at CHA Industries
http://www.chaindustries.com/

I welcome dissenting opinion from the network
if I have misrepresented our forum.

Thank you
Bill Flounders
UC Berkeley



Chandrashekar S Kambar wrote:
 
Hi,
> 
>We are trying to optimize Ni with E-Beam Evaporator (TECPORT). 
> 
>The E-Beam power is raised in two steps: RAISE 1, SOAK 1 AND RAISE 2, SOAK 2.
>ELECTRON BEAM PATTERN: Focused to one point (to the middle of the crucible).
>CRUCIBLE: Graphite.
> 
>ISSUE: During the RAISE 1, everything seems to be normal and only the material in the middle of the crucible gets melted. During the RAISE 2 the material starts to spit out of the crucible. During the deposition the spitting increases drastically, thus we will
 be forced to stop the deposition. After the deposition when we take out the crucible, crucible was broken across the wall. However there was no damage done to the pocket holder (Hearth). 
> 
>Power % : Raise 1: 5% (V= 6.99 KV and I ~ 70 mA)
>                Raise 2: 10% (V= 6.99 KV and I ~ 120 mA)
>                During the deposition Power % goes up to 16% and the current goes up to 180 mA ( V = 6.99 KV constant).
> 
>We need to know, if there is any way to reduce the crucible cracking and to avoid the spitting of the material. 
> 
>QUESTION 2:
> 
>During the deposition the crucibles are cracked and its pieces are stuck with the Ni material. Is there any way to recover the material by removing the graphite pieces? 
>Thanks and Regards,
>Chandrashekar S Kambar. 
>
>   
> 
>
>_______________________________________________
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