[labnetwork] GaP in sputter

[Noah Clay]

Fouad,

We have sputtered GaP at the University of Pennsylvania.  We let the researchers run on the system for three days and then tore down all shielding and gun hardware, replacing it with spares.  We also foil wrapped any exposed surfaces.  It was time consuming and costly and the researchers did not try this work again, thankfully.  

We did fingerprint the chamber before and after this with RGA.  The shielding and hardware changes indicated no P carry after the work was completed.  We also sputtered silver and sent it out for SIMS before and after.  Afterwards, this indicated a 1e12 cm-3 level of P in the chamber, up from 1e11 cm-3 beforehand.

From a safety perspective, we wore cartridge respirators during shielding change.  Our assumption was that, as an open load system, P on the chamber walls would be substantially oxidized between runs.  <- unlike MBE where the P accumulates and is substantially unreacted.  I haven't taken Stat Mech in twenty years, but would guess that P has a greater affinity for O than H.

Best,
Noah Clay

Quattrone Nanofabrication Facility
University of Pennsylvania 
Philadelphia, PA

Sent from my iPhone

> On Jun 4, 2015, at 03:32, Fouad Karouta <fouad.karouta at anu.edu.au> wrote:
> 
> Dear colleagues,
>  
> In our multi-users facility in Canberra we do have a sputter with multiple targets used by our users. One suer would like to sputter GaP on Si to be used for solar cells applications.
> Looking at the MSDS, it stated a certain toxicity related to the element P.
>  
> I would like to know if anyone is sputtering GaP and what safety rules are taken for example to clean the chamber or just change targets and if there is any potential of forming PH3.
>  
> Best regards,
> Fouad Karouta
>  
> *********************************
> Manager ANFF ACT Node
> Australian National Fabrication Facility
> Research School of Physics and Engineering
> Australian National University
> ACT 0200, Canberra, Australia
> Tel: + 61 2 6125 7174
> Mob: + 61 451 046 412
> Email: fouad.karouta at anu.edu.au
> http://anff-act.anu.edu.au/
>  
>  
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork

Sent from my iPhone

> On Jun 4, 2015, at 03:32, Fouad Karouta <fouad.karouta at anu.edu.au> wrote:
> 
> Dear colleagues,
>  
> In our multi-users facility in Canberra we do have a sputter with multiple targets used by our users. One suer would like to sputter GaP on Si to be used for solar cells applications.
> Looking at the MSDS, it stated a certain toxicity related to the element P.
>  
> I would like to know if anyone is sputtering GaP and what safety rules are taken for example to clean the chamber or just change targets and if there is any potential of forming PH3.
>  
> Best regards,
> Fouad Karouta
>  
> *********************************
> Manager ANFF ACT Node
> Australian National Fabrication Facility
> Research School of Physics and Engineering
> Australian National University
> ACT 0200, Canberra, Australia
> Tel: + 61 2 6125 7174
> Mob: + 61 451 046 412
> Email: fouad.karouta at anu.edu.au
> http://anff-act.anu.edu.au/
>  
>  
> _______________________________________________
> labnetwork mailing list
> labnetwork at mtl.mit.edu
> https://www-mtl.mit.edu/mailman/listinfo.cgi/labnetwork
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <https://mtl.mit.edu/pipermail/labnetwork/attachments/20150604/ea6d40f8/attachment.html>