[labnetwork] Atomic-layer etching Si in a standard ICP reactor

[N P VAMSI KRISHNA]

Dear Bryan,
Here is a recipe which we used to etch few nano meters of 200 nm SOI in our
OXFORD Plasmalab System 100 tool.

BCl3 -15
Cl2 - 10
Chamber Pressure: 9 mT
He-10 T
Process Temp-10 C
ICP- 600-700 W
RF-70-80 W
ETCH RATE - ~60-75 nm/min

You may need to play with pressure and power to lower down the etch rate
further.

Thanks & best regards,
vamsi


On Fri, Jun 5, 2015 at 7:48 PM, bryan cord <bcord at umn.edu> wrote:

> Hi Everyone,
>
> I was wondering if anybody had experience with running a basic Cl-based
> atomic-layer etching process of silicon in a standard plasma etcher.  I'm
> thinking of trying to add it to our Oxford ICP tool as a standard process;
> if anyone's done or is doing something similar, could you post some process
> specifics?  I've got a basic outline worked out from literature references
> but it will probably need a lot of tweaking to actually work in our tool.
>
> Thanks!
>
> -bryan
>
> --
> Bryan Cord
> Minnesota Nano Center (MNC)
> University of Minnesota
> 115 Union St SE, Rm 153
> Minneapolis, MN 55455
> 612.626.3287 (work)
> 857.891.6820 (cell)
> bcord at umn.edu
> http://wiki.umn.edu/EBPG
>
>
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-- 
--
Thanks & Best Regards,
-----------------
*N.P.Vamsi Krishna*
Center for Nano Science and Engineering (CeNSE),
Indian Institute of Science(IISc), Bangalore.
INDIA-560012

“Educating the mind without educating the heart is no education at all.”
-Aristotle
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