[labnetwork] Si RIE etch

[Jugessur, Aju S]

Hi,

I have a user who is using the following Si etch recipe on our Oxford NGP80 etcher:

RF power: 100 W
Pressure: 100 mT
CF4 flow rate: 25 sccm
O2 flow rate: 3.1 sccm

The etch rate from the above parameters is ~ 0.15 microns/min.
The selectivity is 1:3.
 Can anyone suggest what parameters to tweak to increase the etch rate without causing too much substrate damage or roughness?

Thanks for your suggestions.

Regards
Aju

Aju Jugessur Ph.D.
Director, University of Iowa Microfabrication Facility
Professor (Adj.), Physics and Astronomy
OSTC, Iowa Advanced Technology Labs
University of Iowa

205 N. Madison St
Iowa City, IA 52242
319 -353-2342
aju-jugessur at uiowa.edu
http://ostc.uiowa.edu/uimf


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