[labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber?

Sun Nov 19 18:22:59 EST 2017

Hi Sherine,

Further to Craig remarks I wonder if the CF4/Ar is the right gas mixture to etch ZnO where the etch seems more physical upon your description then chemical. Note Zn fluoride is quite non-volatile. If you look in literature a more chemical etching of ZnO would use CH4-H2. However the latter needs to be alternated with short oxygen plasma to remove polymers formed during the CH4:H2 step.

Regards,
Fouad Karouta

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From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of WARD Craig
Sent: Saturday, 18 November 2017 5:30 AM
To: Sherine George <Sherine.George at rice.edu>
Cc: labnetwork at mtl.mit.edu
Subject: [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber?

Sherine,

As with sputtering any metal in a vacuum chamber there will be some metal redeposited in the chamber.  How much depends on the process itself, mask open area, etch rate and throughput.  This will most likely not cause any harm the ICP tool unless you get sufficient buildup of a metallic coating on the ICP tube itself then this will manifest in plasma stability and striking issues.  If this does happen then you can always bead blast the tube to remove any residual metal.  So, as far as the tool goes you are fairly safe.  I cannot offer the same reassurance for device performance.  As soon as you have introduced metal into an etch chamber there is a risk of contamination through re-sputtering of the metal deposited onto wafer clamps etc..

If you have any further process related questions with Oxford tools please don't hesitate to let me know.

Best Regards,

Craig Ward
US Applications Manager

Oxford Instruments America, Inc.
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From: labnetwork-bounces at mtl.mit.edu<mailto:labnetwork-bounces at mtl.mit.edu> [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Sherine George
Sent: Wednesday, November 15, 2017 4:32 PM
To: labnetwork at mtl.mit.edu<mailto:labnetwork at mtl.mit.edu>
Subject: -|EXT|- [labnetwork] ZnO etch via ICP-RIE, impact to vacuum chamber?

Hello All,

We have a user requesting to use our singleton Oxford PlasmaPro ICP-RIE system to etch ZnO via a CF4/Ar mix. This request is based on a paper characterizing this etch chemistry (attached). The etch mechanism presented in the paper is the creation of Zn(CFX)y compounds via CF3 radicals and CF3+  present in the plasma that are subsequently removed via Ar+ ion bombardment.

Our primary concern is with the possibility of creation of elemental Zn as a byproduct that lingers in the chamber with subsequent long term consequences to the chamber vacuum quality. Is this concern valid? Does anyone have experience with such an etch involving ZnO and is able to provide guidance on best practices?

Thanks,

Sherine George, Ph.D.
Research Scientist, Nanofabrication Cleanroom
Shared Equipment Authority, Rice University

Abercrombie, C112
Office: 713-348-4307 |Cell: 217-819-6740 |sherine.george at rice.edu<mailto:sherine.george at rice.edu>

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