[labnetwork] Deposition ICP CVD Silicon dioxide for Lift process

[Fouad Karouta]

Dear Srinivasa,
I did SiOx liftoff with resist in a regular PECVD system keeping the electrode temperature to 90-100 deg C. Higher temperature will hardbake the resist and makes liftoff difficult to impossible. ICP CBD will allow you to get better oxide at 100 degrees than with PECVD.
About contamination we haven’t looked at this but the system is cleaned every week so I don’t believe this is a concern.
Regards
Fouad Karouta
ANU - ANFF ACT node
Canberra, Australia

On 9 May 2019, at 8:45 am, Srinivasa Reddy <sreevyas at gmail.com<mailto:sreevyas at gmail.com>> wrote:

Dear Researchers,
I want to use ICP PECVD facility for depositing silicon dioxide on patterned photoresist sample.
Finally lift-off the SiO2, The sample consist of gold patterns upon glass substrate.
We have only one ICP CVD Unit, which mostly used for semiconductor and GaN device passivation layers along with some other MEMS process.

I suspect the Photoresist may contaminate the chamber and also getting lift may not be possible after subjecting to ICP & RF powers.

I request experts to throw some light on this process feasibility and your experience.


Thanks & Regards
Srinivasa Reddy Kuppireddi
Project Manager
Center for NEMS & Nano Photonics (CNNP)
ESB 225, Dept. of Electrical Engineering
Indian Institute of Technology(IIT) Madras
Chennai-600036, Indian
+91 44 2257 5493 (O)
+91 789 326 8010(M)
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