[labnetwork] High temperature annealing for SiC devices

[Bill Kiether]

Hello,

We are looking for someone (vendor or university) who can quickly (next few
weeks) do high temperature annealing. Ideally, the temperature range would
be 1600-2000 deg C, but ~1825 C would be sufficient. Our sample is a 6" SiC
device wafer, but we are willing to dice it into smaller pieces if
necessary or if the 1600-2000 C  range is possible. Preferably, the user
would also be familiar with and capable of adding the "carbon cap layer"
necessary for SiC annealing at these temperature.  Anyone out there know of
or have these capabilities?

We are familiar with Ascatron, but the international logistics make that a
tricky option due to our time frame, etc.

Dr. Bill Kiether
Research Scientist
NCSU Nanofabrication Facility
wjkiethe at ncsu.edu
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