[labnetwork] Mask of Al in HF

[Shimon Eliav]

Hi All,
I found very interesting the discussion around Joe's question.
Please find attached the summary of the answers.
Regards,
Shimon

From: labnetwork [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Maduzia, Joseph Walter
Sent: Tuesday, 26 October 2021 23:49
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Mask of Al in HF

Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep'd first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it's not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/

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