[labnetwork] Doing ALD at high temperature using a Tokyo Electron NT 333 spatial ALD system ?

[Stephen Howe]

Dear Lab members,

I am looking at purchasing a used TEL NT 333 ALD system .
The scope of this is to process wafers in an experimental ALD process
at high temperature, between around 700C to 800C.

Unfortunately, the detailed performance specifications of the TEL NT333
system have not been forthcoming from my potential supplier thus far.

I was therefore wondering if any Lab Members might be able to send me
the detailed performance specifications for the TEL NT 333 ALD platform
?

Specifically , the questions I need to answer are as following:-

1. Wafer size compatibility (300 mm)
2. The kind of ALD it runs (Plasma ALD)
3. Confirm the tool can potentially deposit high-k oxides (HfO2 and
ZrO2) and some nitrides (Hf and Zr based).
4. Data about the machine throughput capabilities i.e how many wafers
it can run per hour.
5. What is the processing temperature range specification .
6. Please give detailed specifications about the  pre and post-
processing steps which can be done between each ALD step.
7. Please give the process vacuum specifications.

Thanks for any input.

Yours sincerely,

SDI Fabsurplus Italia SRL
Stephen Howe
Company Owner
email: info at fabsurplus.com
Mobile: Italy (+39) 335-710-7756 (Also available for WhatsApp Calls)
Home Office: Italy (+39) 081-240-3115
WWW.FABSURPLUS.COM
Your Marketplace for Used Semiconductor Equipment

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