[labnetwork] Anneal temp for aluminum on silicon with forming gas

[Fouad Karouta]

Hi Julia,

 

Pure H2 is commonly used in epitaxy reactors at temperature well above
600°C. MOCVD of GaAs/AlGaAs is performed at T=600-800C.

In the past I did liquid phase epitaxy of GaAs/AlGaAs around 800C in pure
H2.

Moreover Flammability of H2 in air is between 4 to 80%. So in inert gas like
N2 the flammability are different.

 

Hope this would help.

Fouad Karouta

 

*********************************

Facility Manager ANFF ACT Node

Research School of Physics and Engineering

Australian National University

ACT 0200, Canberra, Australia

Tel: + 61 2 6125 7174

Mob: + 61 451 046 412

Email: fouad.karouta at anu.edu.au

 

From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu]
On Behalf Of Aebersold,Julia W.
Sent: Wednesday, 14 November 2012 7:12 AM
To: Lab Network (labnetwork at mtl.mit.edu)
Subject: [labnetwork] Anneal temp for aluminum on silicon with forming gas

 

I wanted to gather some information of aluminum anneal on a silicon wafer
performed by other cleanrooms.   We are using 5% forming gas with an anneal
temp of  400C for ½ hour with a 20C/min ramp up and ramp down  However, I
have also seen higher temps up to 475C, but was concerned about the
flammability of 100% hydrogen per its MSDS.

 

Cheers!

 

Julia Aebersold, Ph.D. 

MNTC Cleanroom Manager

Shumaker Research Building, Room 233

2210 South Brook Street

University of Louisville

Louisville, KY  40292

 

502-852-1572

http://louisville.edu/micronano/

 

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