[labnetwork] Oxide growth in Nitrogen

[Savitha P]

Dear Colleagues:

 We had done a N2 anneal in our atmospheric furnace for 10hrs at 1100 deg
C, substrate was silicon <100>, P-type. The oxide thickness obtained was
~16nm (variation of 15.2 - 17.6nm). For one hr anneal, the thickness
obtained was ~5nm. It would be really helpful if we could know the silicon
dioxide thickness expected for N2 annealing experiments. The percentage of
O2 impurity in our N2 is supposed to be <1.000 ppb according to our
purifier specs.

Regards,

Savitha

-- 
Dr.Savitha P
Facility Technology Manager
National Nanofabrication Centre
Centre for Nano Science and Engineering (CeNSE)
Indian Institute of Science
Bangalore - 560012
Ph: +91 80 2293 3254
www.nano.iisc.ernet.in








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