[labnetwork] SiC stress

[Aebersold,Julia W.]

This doesn't sound quite right or you are getting a non-uniform deposition.  We use a Toho laser stress measurement system for measuring thin film stress from our Oxford PECVD (same system as yours).

Cheers!

Julia Aebersold, Ph.D.
MNTC Cleanroom Manager
Shumaker Research Building, Room 233
2210 South Brook Street
University of Louisville
Louisville, KY  40292

502-852-1572
http://louisville.edu/micronano/

From: labnetwork-bounces at mtl.mit.edu [mailto:labnetwork-bounces at mtl.mit.edu] On Behalf Of Adithi Umamaheswara
Sent: Friday, June 21, 2013 7:26 AM
To: labnetwork at mtl.mit.edu
Cc: iisc mcc
Subject: [labnetwork] SiC stress

Dear Sir/Madam


           I have deposited Amorphous Silicon Carbide using PECVD (OXFORD INSTRUMENTS PLASMA LAB SYSTEM 100). I did the Stress measurement using DEKTAK; I found that the SiC layer had both compressive stress and tensile stress.

           Getting both compressive stress and tensile stress on same SiC layer, is this normal?

            Deposition temperature: 400°C.
            Pressure: 1400 mT.

            Requesting for a reply asap.


With Regards,

Adithi.U
Facility Technologist,
National Nano Fabrication Centre,
CeNSE, Indian Institute of Science
Bangalore
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