[labnetwork] SiC stress

[Adithi Umamaheswara]

Dear Sir/Madam


           I have deposited Amorphous Silicon Carbide using PECVD (OXFORD
INSTRUMENTS PLASMA LAB SYSTEM 100). I did the Stress measurement using
DEKTAK; I found that the SiC layer had both compressive stress and tensile
stress.


            Getting both compressive stress and tensile stress on same SiC
layer, is this normal?


            Deposition temperature: 400°C.

            Pressure: 1400 mT.



            Requesting for a reply asap.



With Regards,

Adithi.U
Facility Technologist,
National Nano Fabrication Centre,
CeNSE, Indian Institute of Science
Bangalore
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