[labnetwork] Mask of Al in HF

[Roberto R. Panepucci]

Hi Joe, 
We switched to Au pads and also going to vapour HF to release SOI waveguides a while back (some 20yrs...). 
I am looking for a ´modern´ solution for this as well, so I hope someone points out that nowadays compound X by company Y does this very easily... 
Cheers, 
Roberto 

----- 
Roberto R. Panepucci, PhD 
Associate Coordinator - CTINano 
Senior Researcher - CTI_DINAM/CGPS 
Centro de Tecnologia da Informação Renato Archer - CTI 
Ministério da Ciência, Tecnologia e Inovação - MCTI 
https://www.gov.br/mcti/pt-br/rede-mcti/cti 

----- Em 26 de Out de 2021, em 17:48, Maduzia, Joseph Walter <jmaduzi2 at illinois.edu> escreveu: 

> Hello,

> Does anyone have any suggestions for mask materials to protect Al in HF 49% for
> SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch
> to undercut and free devices, but have Al contact pads and AL is dep’d first.
> Typically we use PR as pattern mask, but the Al is etching behind the PR. In
> this case the Al is deposited first, so although order of operations change
> might help, it’s not a good option atm.

> Thank you for any suggestions you might have!

> JOE MADUZIA
> MNMS Laboratory Specialist

> The Grainger College of Engineering
> Mechanical Science and Engineering

> 2239 Sidney Lu Mechanical Engineering Bldg
> 1206 W. Green
> Urbana, IL 61801
> 217.244.6302 | [ mailto:jmaduzi2 at illinois.edu | jmaduzi2 at illinois.edu ]

> [ https://cleanroom.mechse.illinois.edu/ |
> https://cleanroom.mechse.illinois.edu/ ]

> [ http://illinois.edu/ ]

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