[labnetwork] Mask of Al in HF

[Paik, Seung Joon]

Hello Joe,

There are two papers about Al protection while etching sacrificial oxide layer, experimenting various mixtures of HF, NH4F, and Glycerin by volume. Though they are written in Korean, figures and tables are in English, so you can figure out where to start.

https://www.koreascience.or.kr/article/JAKO199900842576322.pdf
https://www.koreascience.or.kr/article/JAKO200000842576127.pdf

Good luck,

Seung-Joon Paik, Ph.D.
Senior Research Engineer
Instructional Lab Coordinator

Institute for Electronics and Nanotechnology (IEN)
Georgia Institute of Technology
spaik8 at gatech.edu



From: labnetwork <labnetwork-bounces at mtl.mit.edu> On Behalf Of Maduzia, Joseph Walter
Sent: Tuesday, October 26, 2021 4:49 PM
To: labnetwork at mtl.mit.edu
Subject: [labnetwork] Mask of Al in HF

Hello,

Does anyone have any suggestions for mask materials to protect Al in HF 49% for SiO2 removal in SOI wafer? The device is SOI, ICP DRIE etched to glass, HF etch to undercut and free devices, but have Al contact pads and AL is dep'd first. Typically we use PR as pattern mask, but the Al is etching behind the PR. In this case the Al is deposited first, so although order of operations change might help, it's not a good option atm.

Thank you for any suggestions you might have!
JOE MADUZIA
MNMS Laboratory Specialist

The Grainger College of Engineering
Mechanical Science and Engineering

2239 Sidney Lu Mechanical Engineering Bldg
1206 W. Green
Urbana, IL 61801
217.244.6302 | jmaduzi2 at illinois.edu<mailto:jmaduzi2 at illinois.edu>
https://cleanroom.mechse.illinois.edu/

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